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FeSi2 thin films in...
FeSi2 thin films investigated by X-ray photoelectron and infrared spectroscopy
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- Toneva, A (author)
- Bulgarian Academy of Sciences, Sofia
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- Goranova, E (author)
- Bulgarian Academy of Sciences, Sofia
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- Beshkov, G (author)
- Bulgarian Academy of Sciences, Sofia
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- Marinova, T (author)
- Institute of General and Inorganic Chemistry, Sofia
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- Kakanakova-Georgieva, Anelia, 1970- (author)
- Institute of General and Inorganic Chemistry, Sofia
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(creator_code:org_t)
- 2000
- 2000
- English.
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In: Vacuum. - 0042-207X .- 1879-2715. ; 58:2-3, s. 420-427
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- Thin films of iron silicide prepared by ion-beam and by electron-beam evaporation of iron on silicon substrates and following rapid thermal processing are investigated. Low-energy argon ion sputtering of surface layer is used for depth profile XPS analysis. The Si2p, Fe2p3/2, O1s and C1s electron spectra are recorded. On the basis of established binding energies and infrared transmission spectra (200–600 cm−1) conclusion are made about the effect of the annealing temperature and duration on the chemical bond type and phase composition of the iron silicide films.
Keyword
- Thin films; Iron disilicide; XPS
- NATURAL SCIENCES
- NATURVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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