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Growth of 6H and 4H...
Growth of 6H and 4H-SiC by sublimation epitaxy
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- Syväjärvi, Mikael (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Yakimova, Rositsa (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Tuominen, M (author)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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- Kakanakova-Georgieva, Anelia, 1970- (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Macmillan, M F (author)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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- Henry, Anne (author)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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- Wahab, Qamar Ul (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Janzén, Erik (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- 1999
- 1999
- English.
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In: Journal of Crystal Growth. - 0022-0248 .- 1873-5002. ; 197:1-2, s. 155-162
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- The epitaxial sublimation growth process of SiC has been investigated. Layers with specular surfaces and growth rates up to 2 mm/h have been obtained. No step bunching is observed by optical microscopy even on very thick layers which indicates a stable step growth mechanism. Under certain growth conditions the morphology degrades. The morphological stability is investigated and discussed in relation to the growth kinetics. Impurities in the epitaxial layers are investigated by secondary ion mass spectroscopy and low-temperature photoluminescence. The carrier concentration is measured by capacitance–voltage measurements. The structural quality of the grown material is improved compared to the substrate as shown by X-ray diffraction measurements.
Keyword
- SiC; Morphology; Growth rate; Purity
- NATURAL SCIENCES
- NATURVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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