Investigation of domain evolution in sublimation epitaxy of SiC

• High resolution X-ray diffractometry has been applied to study domain misorientation in SiC epi-layers grown by the sublimation epitaxy method. A pronounced effect of the growth conditions on the mosaicity of the epi-layer has been observed. The results are discussed in terms of domain evolution and structural changes during the epi-growth under different growth conditions.

Nyckelord

Silicon carbide; Sublimation epitaxy; X-ray diffraction; Domain misorientation

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