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Real-time control o...
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Howe, B MUniversity of Illinois
(author)
Real-time control of AlN incorporation in epitaxial Hf1-xAlxN using high-flux, low-energy (10-40 eV) ion bombardment during reactive magnetron sputter deposition from a Hf0.7Al0.3 alloy target
- Article/chapterEnglish2011
Publisher, publication year, extent ...
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Elsevier Science B.V., Amsterdam.2011
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printrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:liu-64586
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-64586URI
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https://doi.org/10.1016/j.actamat.2010.08.023DOI
Supplementary language notes
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Language:English
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Summary in:English
Part of subdatabase
Classification
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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The AlN incorporation probability in single crystal Hf-1 (-) xAlxN(0 0 1) layers is controllably adjusted between similar to 0% and 100% by varying the ion energy (E-i) incident at the growing film over a narrow range, 10-40 eV. The layers are grown on MgO(0 0 1) at 450 degrees C using ultrahigh vacuum magnetically unbalanced reactive magnetron sputtering from a Hf0.7Al0.3 alloy target in a 5%-N-2/Ar atmosphere at a total pressure of 20 mTorr (2.67 Pa). The ion to metal flux ratio incident at the growing film is constant at 8. Epitaxial film compositions vary from x = 0.30 with E-i = 10 eV, to 0.27 with E-i = 20 eV, 0.17 with E-i = 30 eV, and andlt;= 0.002 with E-i andgt;= 40 eV. Thus, the AlN incorporation probability decreases by greater than two orders of magnitude. This extraordinary range in real-time manipulation of film chemistry during deposition is due to the efficient resputtering of deposited Al atoms (27 amu) by Ar+ ions (40 amu) neutralized and backscattered from heavy Hf atoms (178.5 amu) in the film. This provides a new reaction pathway to synthesize, at high deposition rates, compositionally complex heterostructures, multilayers, and superlattices with abrupt interfaces from a single alloy target by controllably switching E-i. For multilayer and superlattice structures, the choice of E-i value determines the layer composition and the switching periods control the individual layer thickness.
Subject headings and genre
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Sputter deposition
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Ion bombardment
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Transition metal nitrides
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HfAlN
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Nanolayers
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TECHNOLOGY
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TEKNIKVETENSKAP
Added entries (persons, corporate bodies, meetings, titles ...)
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Sammann, EUniversity of Illinois
(author)
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Wen, J GUniversity of Illinois
(author)
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Spila, TUniversity of Illinois
(author)
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Greene, J EUniversity of Illinois
(author)
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Hultman, LarsLinköpings universitet,Tunnfilmsfysik,Tekniska högskolan(Swepub:liu)larhu75
(author)
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Petrov, IUniversity of Illinois
(author)
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University of IllinoisTunnfilmsfysik
(creator_code:org_t)
Related titles
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In:ACTA MATERIALIA: Elsevier Science B.V., Amsterdam.59:2, s. 421-4281359-6454
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