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  • Rivera, AntonioInstituto de Microelectronica de Madrid (author)

On the Exciton Model for Ion-Beam Damage: The Example of TiO2

  • Article/chapterEnglish2010

Publisher, publication year, extent ...

  • Elsevier BV,2010
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:liu-64720
  • https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-64720URI
  • https://doi.org/10.1016/j.nimb.2010.05.068DOI

Supplementary language notes

  • Language:English
  • Summary in:English

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  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • The non-radiative exciton decay model recently developed to account for swift ion-beam damage toLiNbO3 is, here, discussed within a general physical perspective, taking previous work on alkali halides as a reference. Some general rules for the validity of excitonic models have been put forward, allowing one to predict the irradiation behaviour of other materials. As a new example of application, some preliminary data on the generation and growth of uniform amorphous layers induced by irradiation with Br at 13 MeV and 25 MeV have been performed on rutile (TiO2). In addition sub-threshold irradiations with Br ions at 9 MeV have been carried out. Defects generation is observed as a result. This effect is explained with the exciton model. Experiments are in the electronic excitation regime and use moderate fluences in the range of 6 x 1012 to 1.5x 1014 cm-2. The results show similar features to those found for LiNbO3 and are, in principle, consistent with a non-radiative exciton decay model.

Subject headings and genre

Added entries (persons, corporate bodies, meetings, titles ...)

  • Crespillo, MiguelCentro de Microanalisis de Materiales, Universidad Autonoma de Madrid (author)
  • Olivares, JoseCentro de Microanalisis de Materiales, Universidad Autonoma de Madrid (author)
  • Sanz, RuyInstituto de Ciencia de Materiales de Madrid (author)
  • Jensen, JensLinköpings universitet,Tunnfilmsfysik,Tekniska högskolan(Swepub:liu)jenje80 (author)
  • Agullo-Lopez, FernandoCentro de Microanalisis de Materiales, Universidad Autonoma de Madrid (author)
  • Instituto de Microelectronica de MadridCentro de Microanalisis de Materiales, Universidad Autonoma de Madrid (creator_code:org_t)

Related titles

  • In:Nuclear Instruments and Methods in Physics Research Section B: Elsevier BV268, s. 3122-31260168-583X1872-9584

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