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Standard-free composition measurements of Alx In1–xN by low-loss electron energy loss spectroscopy

Palisaitis, Justinas (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
Hsiao, Ching-Lien (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
Junaid, Muhammad (author)
Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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Xie, Mengyao (author)
Linköpings universitet,Halvledarmaterial,Tekniska högskolan
Darakchieva, Vanya (author)
Linköpings universitet,Halvledarmaterial,Tekniska högskolan
Carlin, Jean-Francois (author)
Ecole Polytechnique Fédérale de Lausanne
Grandjean, Nicolas (author)
Ecole Polytechnique Fédérale de Lausanne
Birch, Jens (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
Hultman, Lars (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
Persson, Per O.Å. (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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 (creator_code:org_t)
2010-12-22
2011
English.
In: physica status solidi (RRL) – Rapid Research Letters. - : Wiley. - 1862-6270 .- 1862-6254. ; 5:2, s. 50-52
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • We demonstrate a standard-free method to retrieve compositional information in Alx In1–xN thin films by measuring the bulk plasmon energy (Ep), employing electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM). Two series of samples were grown by magnetron sputter epitaxy (MSE) and metal organic vapor phase epitaxy (MOVPE), which together cover the full com- positional range 0 ≤ x ≤ 1. Complementary compositional measurements were obtained using Rutherford backscattering spectroscopy (RBS) and the lattice parameters were obtained by X-ray diffraction (XRD). It is shown that Ep follows a linear relation with respect to composition and lattice parameter between the alloying elements from AlN to InN allowing for straightforward compositional analysis.

Keyword

AlInN;low-loss EELS;thin films;compositional analysis
NATURAL SCIENCES
NATURVETENSKAP

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