WFRF:(Buyanova M.)
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- Dagnelund, DanielLinköpings universitet,Funktionella elektroniska material,Tekniska högskolan (author)
Effect of postgrowth hydrogen treatment on defects in GaNP
- Article/chapterEnglish2011
Publisher, publication year, extent ...
- American Institute of Physics,2011
- electronicrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:liu-67843
- https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-67843URI
- https://doi.org/10.1063/1.3576920DOI
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- Language:English
- Summary in:English
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- Original Publication: Daniel Dagnelund, Xingjun Wang, C W Tu, A Polimeni, M Capizzi, Weimin Chen and Irina Buyanova, Effect of postgrowth hydrogen treatment on defects in GaNP, 2011, APPLIED PHYSICS LETTERS, (98), 14, 141920. http://dx.doi.org/10.1063/1.3576920 Copyright: American Institute of Physics http://www.aip.org/
- Effect of postgrowth hydrogen treatment on defects and their role in carrier recombination in GaNP alloys is examined by photoluminescence (PL) and optically detected magnetic resonance. We present direct experimental evidence for effective activation of several defects by low-energy subthreshold hydrogen treatment (andlt;= 100 eV H ions). Among them, two defect complexes are identified to contain a Ga interstitial. Possible mechanisms for the H-induced defect activation and creation are discussed. Carrier recombination via these defects is shown to efficiently compete with the near band-edge PL, explaining the observed degraded optical quality of the alloys after the H treatment.
Subject headings and genre
- TECHNOLOGY
- TEKNIKVETENSKAP
Added entries (persons, corporate bodies, meetings, titles ...)
- Wang, XingjunLinköpings universitet,Funktionella elektroniska material,Tekniska högskolan(Swepub:liu)xinwa58 (author)
- Tu, C WUniversity of California San Diego (author)
- Polimeni, AUniversity Roma La Sapienza (author)
- Capizzi, MUniversity Roma La Sapienza (author)
- Chen, WeiminLinköpings universitet,Funktionella elektroniska material,Tekniska högskolan(Swepub:liu)weich55 (author)
- Buyanova, IrinaLinköpings universitet,Funktionella elektroniska material,Tekniska högskolan(Swepub:liu)iribo40 (author)
- Linköpings universitetFunktionella elektroniska material (creator_code:org_t)
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- In:APPLIED PHYSICS LETTERS: American Institute of Physics98:14, s. 141920-0003-69511077-3118
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