Sökning: WFRF:(Hultman Per Professor) >
Electron Energy Los...
Electron Energy Loss Spectroscopy of III-Nitride Semiconductors
-
- Palisaitis, Justinas (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
-
- Persson, Per, Dr. (preses)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
-
- Hultman, Lars, Professor (preses)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
-
visa fler...
-
- Birch, Jens, Professor (preses)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
-
- Coronel, Ernesto, Dr. (opponent)
- Uppsala University
-
visa färre...
-
(creator_code:org_t)
- ISBN 9789173931618
- Linköping : Linköping University Electronic Press, 2011
- Engelska 47 s.
-
Serie: Linköping Studies in Science and Technology. Thesis, 0280-7971 ; 1487
- Relaterad länk:
-
https://liu.diva-por... (primary) (Raw object)
-
visa fler...
-
https://liu.diva-por...
-
https://urn.kb.se/re...
-
visa färre...
Abstract
Ämnesord
Stäng
- This Licentiate Thesis covers experimental and theoretical investigations of the bulk plasmon response to different compositions and strain states of group III-nitride materials. Investigated materials were grown using magnetron sputtering epitaxy and metal organic chemical vapour deposition and studied by Rutherford backscattering spectrometry, X-ray diffraction, electron microscopy and electron energy loss spectroscopy (EELS).It is shown that low-loss EELS is a powerful method for a fast compositional determination in AlxIn1-xN system. The bulk plasmon energy of the investigated material system follows a linear relation with respect to lattice parameter and composition in unstrained layers.Furthermore, the effect of strain on the bulk plasmon peak position has been investigated by using low-loss EELS in group III-nitrides. We experimentally determine the AlN bulk plasmon peak shift of 0.156 eV per 1% volume change. The AlN peak shift was corroborated by full potential calculations (Wein2k), which reveal that the bulk plasmon peak position of III-nitrides varies near linearly with unit cell volume variations.Finally, self-assembled ternary Al1-xInxN nanorod arrays with variable In concentration have been realized onto c-plane sapphire substrates by ultra-high-vacuum magnetron sputtering epitaxy with Ti0.21Zr0.79N or VN seed layer assistance. The nanorods exhibit hexagonal cross-sections with preferential growth along the Al1-xInxN c-axis. A coaxial rod structure with higher In concentration in the core was observed by scanning transmission electron microscopy in combination with low-loss EELS.
Nyckelord
- NATURAL SCIENCES
- NATURVETENSKAP
Publikations- och innehållstyp
- vet (ämneskategori)
- lic (ämneskategori)
Hitta via bibliotek
Till lärosätets databas