Modeling and simulations of Pd/n-ZnO Schottky diode and its comparison with measurements

Muniza Faraz, SadiaLinköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan (författare)

Modeling of Pd/ZnO Schottky diode has been performed together with a set of simulations to investigate its behavior in current-voltage characteristics. The diode was first fabricated and then the simulations were performed to match the IV curves to investigate the possible defects and their states in the bandgap. The doping concentration measured by capacitancevoltage is 3.4 x 1017 cm-3. The Schottky diode is simulated at room temperature and the effective barrier height is determined from current voltage characteristics both by measurements and simulations and it was found to be 0.68eV. The ideality factor obtained from simulated results is 1.06-2.04 which indicates that the transport mechanism is thermionic. It was found that the recombination current in the depletion region is responsible for deviation of experimental values from the ideal thermionic model deployed by the simulator.

Noor, HadiaDepartment of Physics, Islamia University of Bahawalpur, Pakistan (författare)
Asghar, M.Department of Physics, Islamia University of Bahawalpur, Pakistan (författare)
Willander, MagnusLinköpings universitet,Institutionen för teknik och naturvetenskap,Tekniska högskolan(Swepub:liu)magwi72 (författare)
Wahab, Qamar ulLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)qamwa17 (författare)
Linköpings universitetInstitutionen för fysik, kemi och biologi (creator_code:org_t)

Av författaren/redakt...: Muniza Faraz, Sa ...; Noor, Hadia; Asghar, M.; Willander, Magnu ...; Wahab, Qamar ul

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.