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Phase Predistortion...
Phase Predistortion of a Class-D Outphasing RF Amplifier in 90 nm CMOS
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- Fritzin, Jonas (author)
- Linköpings universitet,Elektroniska komponenter,Tekniska högskolan,Linköping University,Department of Electrical Engineering
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- Jung, Ylva (author)
- Linköpings universitet,Reglerteknik,Tekniska högskolan,Linköping University,Department of Electrical Engineering
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- Landin, Per Niklas (author)
- Högskolan i Gävle,KTH,ACCESS Linnaeus Centre,Signalbehandling,Elektronik,Royal Institute of Technology, Sweden
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- Händel, Peter, 1962- (author)
- Högskolan i Gävle,KTH,Signalbehandling,ACCESS Linnaeus Centre,Elektronik,Signal Processing Lab, ACCESS Linneaus Center,Royal Institute of Technology, Sweden
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- Enqvist, Martin, 1976- (author)
- Linköpings universitet,Reglerteknik,Tekniska högskolan,Linköping University,Department of Electrical Engineering
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- Alvandpour, Atila (author)
- Linköpings universitet,Elektroniska komponenter,Tekniska högskolan,Linköping University,Department of Electrical Engineering
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(creator_code:org_t)
- 2011
- 2011
- English.
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In: IEEE Transactions on Circuits and Systems - II - Express Briefs. - 1549-7747 .- 1558-3791. ; 58:10, s. 642-646
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https://doi.org/10.1...
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Abstract
Subject headings
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- This brief presents a behavioral model structure and a model-based phase-only predistortion method that are suitable for outphasing RF amplifiers. The predistortion method is based on a model of the amplifier with a constant gain factor and phase rotation for each outphasing signal, and a predistorter with phase rotation only. The method has been used for enhanced data rates for GSM evolution (EDGE) and wideband code-division multiple-access (WCDMA) signals applied to a Class-D outphasing RF amplifier with an on-chip transformer used for power combining in 90-nm CMOS. The measured peak power at 2 GHz was +10.3 dBm with a drain efficiency and power-added efficiency of 39% and 33%, respectively. For an EDGE 8 phase-shift-keying (8-PSK) signal with a phase error of 3 degrees between the two input outphasing signals, the measured power at 400 kHz offset was -65.9 dB with predistortion, compared with -53.5 dB without predistortion. For a WCDMA signal with the same phase error between the input signals, the measured adjacent channel leakage ratio at 5-MHz offset was -50.2 dBc with predistortion, compared with -38.0 dBc without predistortion.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Reglerteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Control Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
Keyword
- Amplifier
- Complementary metal-oxide-semiconductor (CMOS)
- Linearization
- Outphasing
- TECHNOLOGY
- TEKNIKVETENSKAP
- Automatic control
- Reglerteknik
Publication and Content Type
- ref (subject category)
- art (subject category)
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