Optical properties of InN/In0.73Ga0.27N multiple quantum wells studied by spectroscopic ellipsometry

• In this work we study the optical properties of two high quality fifty-periods of In-polarity InN/In0.73Ga0.27N MQWs samples, grown by radio-frequency plasma-assisted molecular beam epitaxy, with different well (0.5-1 nm) and barrier thicknesses (3-4 nm). We employ spectroscopic ellipsometry at room temperature in the energy range from 0.6 to 6 eV, and incidence angles of 60 and 70°. Ellipsometric data were successfully modelled using the model dielectric function approach and a multilayer model assuming the MQWs as a homogeneous layer. The E0, A and E1 MQWs transition energies were determined and found to exhibit a blueshift with decreasing the well thickness.

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optical properties;III-V nitride semiconductors;spectroscopic ellipsometry

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