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Strong suppression ...
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Beyer, JanLinköpings universitet,Funktionella elektroniska material,Tekniska högskolan
(author)
Strong suppression of spin generation at a Fano resonance in a semiconductor nanostructure
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LIBRIS-ID:oai:DiVA.org:liu-74674
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-74674URI
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Language:English
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Summary in:English
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Subject category:vet swepub-contenttype
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Subject category:ovr swepub-publicationtype
Notes
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We observe remarkable, complete suppression of spin generation under optical excitation in a thin InAs/GaAs wetting layer close to the light-hole excitonic resonance, leading to zero electron spin polarization as monitored by adjacent InAs quantum dots. The suppression is attributed to efficient spin relaxation/scattering at the Fano resonance between the light-hole exciton states and the heavy-hole continuum of the wetting layer. The complete suppression is found to remain effective up to temperatures exceeding 100 K.
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Buyanova, IrinaLinköpings universitet,Funktionella elektroniska material,Tekniska högskolan(Swepub:liu)iribo40
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Sernelius, Bo E.Linköpings universitet,Teoretisk Fysik,Tekniska högskolan(Swepub:liu)bose02
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Suraprapapich, SDepartment of Electrical and Computer Engineering, University of California at San Diego, La Jolla, USA
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Tu, C. W.Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California, USA
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Chen, WeiminLinköpings universitet,Funktionella elektroniska material,Tekniska högskolan(Swepub:liu)weich55
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Linköpings universitetFunktionella elektroniska material
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