Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study

Dagnelund, DanielLinköpings universitet,Funktionella elektroniska material,Tekniska högskolan (författare)

funding agencies|Swedish Research Council| 621-2010-3815 |Swedish Institute||
Photoluminescence and optically detected magnetic resonance techniques are utilized to study defect properties of GaNP and GaNAs alloys subjected to post-growth hydrogenation by low-energy sub-threshold ion beam irradiation. It is found that in GaNP H incorporation leads to activation of new defects, which has a Ga interstitial (Ga-i) atom at its core and may also involve a H atom as a partner. The observed activation critically depends on the presence of N in the alloy, as it does not occur in GaP with a low level of N doping. In sharp contrast, in GaNAs hydrogen is found to efficiently passivate Ga-i-related defects present in the as-grown material. A possible mechanism responsible for the observed difference in the H behavior in GaNP and GaNAs is discussed.

Vorona, I.P.Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine (författare)
Nosenko, G.Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine (författare)
Wang, X. J.National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China (författare)
Tu, C. W.Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California, USA (författare)
Yonezu, H.Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Japan (författare)
Polimeni, A.INFM and Dipartimento di Fisica, Università di Roma “La Sapienza”, Roma, Italy (författare)
Capizzi, M.INFM and Dipartimento di Fisica, Universita` di Roma “La Sapienza”, Piazzale A. Moro 2, (författare)
Chen, WeiminLinköpings universitet,Funktionella elektroniska material,Tekniska högskolan(Swepub:liu)weich55 (författare)
Buyanova, IrinaLinköpings universitet,Funktionella elektroniska material,Tekniska högskolan(Swepub:liu)iribo40 (författare)
Linköpings universitetFunktionella elektroniska material (creator_code:org_t)

Ingår i:Journal of Applied Physics: American Institute of Physics (AIP)111:0235010021-89791089-7550

Av författaren/redakt...: Dagnelund, Danie ...; Vorona, I.P.; Nosenko, G.; Wang, X. J.; Tu, C. W.; Yonezu, H.; visa fler...; Polimeni, A.; Capizzi, M.; Chen, Weimin; Buyanova, Irina; visa färre...

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