WFRF:(Buyanova M.)
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Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study
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- Dagnelund, Daniel (author)
- Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan
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- Vorona, I.P. (author)
- Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine
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- Nosenko, G. (author)
- Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine
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- (creator_code:org_t)
- American Institute of Physics (AIP), 2012
- 2012
- English.
- In: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 111:023501
- Journal article (peer-reviewed)
Abstract
Subject headings
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- Photoluminescence and optically detected magnetic resonance techniques are utilized to study defect properties of GaNP and GaNAs alloys subjected to post-growth hydrogenation by low-energy sub-threshold ion beam irradiation. It is found that in GaNP H incorporation leads to activation of new defects, which has a Ga interstitial (Ga-i) atom at its core and may also involve a H atom as a partner. The observed activation critically depends on the presence of N in the alloy, as it does not occur in GaP with a low level of N doping. In sharp contrast, in GaNAs hydrogen is found to efficiently passivate Ga-i-related defects present in the as-grown material. A possible mechanism responsible for the observed difference in the H behavior in GaNP and GaNAs is discussed.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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- ref (subject category)
- art (subject category)
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- Dagnelund, Danie ...
- Vorona, I.P.
- Nosenko, G.
- Wang, X. J.
- Tu, C. W.
- Yonezu, H.
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- Polimeni, A.
- Capizzi, M.
- Chen, Weimin
- Buyanova, Irina
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- NATURAL SCIENCES
- NATURAL SCIENCES
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- Linköping University
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