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  • Zhou, MiUniversity of N Texas (author)

Direct graphene growth on Co3O4(111) by molecular beam epitaxy

  • Article/chapterEnglish2012

Publisher, publication year, extent ...

  • 2012-01-06
  • Institute of Physics,2012
  • electronicrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:liu-75721
  • https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-75721URI
  • https://doi.org/10.1088/0953-8984/24/7/072201DOI

Supplementary language notes

  • Language:English
  • Summary in:English

Part of subdatabase

Classification

  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • Funding Agencies|Semiconductor Research Corporation, Division of Nanomanufacturing Sciences|2123.001|National Science Foundation|DMR-0907475MRI DMR-0922937|
  • Direct growth of graphene on Co3O4(111) at 1000 K was achieved by molecular beam epitaxy from a graphite source. Auger spectroscopy shows a characteristic sp(2) carbon lineshape, at average carbon coverages from 0.4 to 3 ML. Low energy electron diffraction (LEED) indicates (111) ordering of the sp2 carbon film with a lattice constant of 2.5(+/-0.1) angstrom characteristic of graphene. Sixfold symmetry of the graphene diffraction spots is observed at 0.4, 1 and 3 ML. The LEED data also indicate an average domain size of similar to 1800 angstrom, and show an incommensurate interface with the Co3O4(111) substrate, where the latter exhibits a lattice constant of 2.8(+/-0.1) angstrom. Core level photoemission shows a characteristically asymmetric C(1s) feature, with the expected pi to pi* satellite feature, but with a binding energy for the 3 ML film of 284.9(+/-0.1) eV, indicative of substantial graphene-to-oxide charge transfer. Spectroscopic ellipsometry data demonstrate broad similarity with graphene samples physically transferred to SiO2 or grown on SiC substrates, but with the pi to pi* absorption blue-shifted, consistent with charge transfer to the substrate. The ability to grow graphene directly on magnetically and electrically polarizable substrates opens new opportunities for industrial scale development of charge- and spin-based devices.

Subject headings and genre

  • TECHNOLOGY
  • TEKNIKVETENSKAP

Added entries (persons, corporate bodies, meetings, titles ...)

  • Pasquale, Frank LUniversity of N Texas (author)
  • Dowben, Peter AUniversity of Nebraska Lincoln (author)
  • Boosalis, AlexUniversity of Nebraska Lincoln (author)
  • Schubert, MathiasUniversity of Nebraska Lincoln (author)
  • Darakchieva, VanyaLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)vanda79 (author)
  • Yakimova, RositsaLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)rosia15 (author)
  • Kong, LingmeiUniversity of Nebraska Lincoln (author)
  • Kelber, Jeffry AUniversity of N Texas (author)
  • University of N TexasUniversity of Nebraska Lincoln (creator_code:org_t)

Related titles

  • In:Journal of Physics: Institute of Physics24:7, s. 072201-0953-89841361-648X

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