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Direct graphene gro...
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Zhou, MiUniversity of N Texas
(author)
Direct graphene growth on Co3O4(111) by molecular beam epitaxy
- Article/chapterEnglish2012
Publisher, publication year, extent ...
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2012-01-06
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Institute of Physics,2012
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electronicrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:liu-75721
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-75721URI
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https://doi.org/10.1088/0953-8984/24/7/072201DOI
Supplementary language notes
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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Funding Agencies|Semiconductor Research Corporation, Division of Nanomanufacturing Sciences|2123.001|National Science Foundation|DMR-0907475MRI DMR-0922937|
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Direct growth of graphene on Co3O4(111) at 1000 K was achieved by molecular beam epitaxy from a graphite source. Auger spectroscopy shows a characteristic sp(2) carbon lineshape, at average carbon coverages from 0.4 to 3 ML. Low energy electron diffraction (LEED) indicates (111) ordering of the sp2 carbon film with a lattice constant of 2.5(+/-0.1) angstrom characteristic of graphene. Sixfold symmetry of the graphene diffraction spots is observed at 0.4, 1 and 3 ML. The LEED data also indicate an average domain size of similar to 1800 angstrom, and show an incommensurate interface with the Co3O4(111) substrate, where the latter exhibits a lattice constant of 2.8(+/-0.1) angstrom. Core level photoemission shows a characteristically asymmetric C(1s) feature, with the expected pi to pi* satellite feature, but with a binding energy for the 3 ML film of 284.9(+/-0.1) eV, indicative of substantial graphene-to-oxide charge transfer. Spectroscopic ellipsometry data demonstrate broad similarity with graphene samples physically transferred to SiO2 or grown on SiC substrates, but with the pi to pi* absorption blue-shifted, consistent with charge transfer to the substrate. The ability to grow graphene directly on magnetically and electrically polarizable substrates opens new opportunities for industrial scale development of charge- and spin-based devices.
Subject headings and genre
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TECHNOLOGY
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TEKNIKVETENSKAP
Added entries (persons, corporate bodies, meetings, titles ...)
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Pasquale, Frank LUniversity of N Texas
(author)
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Dowben, Peter AUniversity of Nebraska Lincoln
(author)
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Boosalis, AlexUniversity of Nebraska Lincoln
(author)
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Schubert, MathiasUniversity of Nebraska Lincoln
(author)
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Darakchieva, VanyaLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)vanda79
(author)
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Yakimova, RositsaLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)rosia15
(author)
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Kong, LingmeiUniversity of Nebraska Lincoln
(author)
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Kelber, Jeffry AUniversity of N Texas
(author)
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University of N TexasUniversity of Nebraska Lincoln
(creator_code:org_t)
Related titles
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In:Journal of Physics: Institute of Physics24:7, s. 072201-0953-89841361-648X
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