Nanowire Reconstruction on the 4H-SiC(1-102) Surface

Hetzel, M.Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany (författare)

Ordered reconstruction phases on the 4H-SiC(1102) surface have been investigated usinglow-energy electron diffraction (LEED), Auger electron spectroscopy (AES) and scanning tunnelingmicroscopy (STM). After initial hydrogen etching, the samples were prepared by Si deposition andannealing in ultra-high vacuum (UHV). Two distinct reconstruction phases develop upon annealing,first with a (2×1), and at higher temperatures with a c(2×2) LEED pattern. After further annealingthe fractional order LEED spots vanish and a (1x1) pattern develops. For the (2×1) phase, STMmicrographs show that adatom chains develop on large flat terraces, which in view of AES consistof additional Si. These highly linear and equidistant chains represent a self-assembled well-orderedpattern of nanowires developing due to the intrinsic structure of the 4H-SiC(1102) surface. For thec(2×2) phase AES indicates a surface composition close to the bulk stoichiometry. For the (1×1)phase a further Si depletion is observed.

Virojanadara, ChariyaMax-Planck-Institut für Festkörperforschung, Stuttgart, Germany(Swepub:liu)chavi32 (författare)
Choyke, Wolfgang J.Dept. of Physics and Astronomy, University of Pittsburgh, USA (författare)
Starke, UlrichMax-Planck-Institut für Festkörperforschung, Stuttgart, Germany (författare)
Max-Planck-Institut für Festkörperforschung, Stuttgart, GermanyDept. of Physics and Astronomy, University of Pittsburgh, USA (creator_code:org_t)

Ingår i:Silicon Carbide and Related Materials 2006: Trans Tech Publications Inc., s. 529-532

Av författaren/redakt...: Hetzel, M.; Virojanadara, Ch ...; Choyke, Wolfgang ...; Starke, Ulrich

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