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Improvement of Crys...
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Yang, SNational Chiao Tung University, Taiwan National Chiao Tung University, Taiwan
(author)
Improvement of Crystalline and Photoluminescence of Atomic Layer Deposited m-Plane ZnO Epitaxial Films by Annealing Treatment
- Article/chapterEnglish2012
Publisher, publication year, extent ...
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2012-08-27
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American Chemical Society,2012
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Numbers
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LIBRIS-ID:oai:DiVA.org:liu-85200
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-85200URI
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https://doi.org/10.1021/cg300376rDOI
Supplementary language notes
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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Funding Agencies|National Science Council of Taiwan|NSC-99-2221-E-009-095-MY3NSC-99-2112-M-006-017-MY3NSC-100-2112-M-213-002-MY3|
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Monocrystalline m-plane ZnO epitaxial films with flat surface morphology were grown on m-plane sapphire by using atomic layer deposition. X-ray diffraction and transmission electron microscopy measurements verify not only the in-plane epitaxial relationship of the as-grown films as (10 (1) over bar0)andlt; 0001 andgt;(ZnO)parallel to(10 (1) over bar0)andlt;(1) over bar2 (1) over bar0 andgt; Al2O3 but also the absence of domains with undesirable orientations, which are generally obtained in the m-plane ZnO films grown by other methods. Experimental results indicate that the basal plane stacking fault (BSF) is the dominant structural defects that contribute to the emission at 3.31 eV in m-plane ZnO films. Exactly how thermal annealing affects the structural and optical properties of ZnO epi-films was also investigated. Additionally, based on time-resolved photoluminescence at 5 K, the decay time of BSF related emission and near-band-edge (NBE) emission were determined. Results of this work further demonstrated that the decay time of NBE emission increases with a higher annealing temperature, accompanied by an improvement in crystal structure.
Subject headings and genre
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TECHNOLOGY
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TEKNIKVETENSKAP
Added entries (persons, corporate bodies, meetings, titles ...)
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Lin, B HNational Synchrotron Radiat Research Centre, Taiwan National Chiao Tung University, Taiwan National Chiao Tung University, Taiwan
(author)
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Kuo, C CNational Chiao Tung University, Taiwan National Chiao Tung University, Taiwan
(author)
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Hsu, H CLinköpings universitet,Halvledarmaterial,National Cheng Kung University, Taiwan National Cheng Kung University, Taiwan National Cheng Kung University, Taiwan
(author)
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Liu, W-RNational Synchrotron Radiat Research Centre, Taiwan National Chiao Tung University, Taiwan National Chiao Tung University, Taiwan
(author)
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Eriksson, M OLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)marer92
(author)
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Holtz, Per-OlofLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)perho67
(author)
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Chang, C-SNational Chiao Tung University, Taiwan National Chiao Tung University, Taiwan
(author)
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Hsu, C-HNational Synchrotron Radiat Research Centre, Taiwan National Chiao Tung University, Taiwan National Chiao Tung University, Taiwan
(author)
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Hsieh, W FNational Chiao Tung University, Taiwan National Chiao Tung University, Taiwan National Cheng Kung University, Taiwan National Cheng Kung University, Taiwan
(author)
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National Chiao Tung University, Taiwan National Chiao Tung University, TaiwanNational Synchrotron Radiat Research Centre, Taiwan National Chiao Tung University, Taiwan National Chiao Tung University, Taiwan
(creator_code:org_t)
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In:Crystal Growth & Design: American Chemical Society12:10, s. 4745-47511528-74831528-7505
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Yang, S
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Lin, B H
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Kuo, C C
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Hsu, H C
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Liu, W-R
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Eriksson, M O
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Holtz, Per-Olof
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Chang, C-S
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Hsu, C-H
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Hsieh, W F
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Crystal Growth & ...
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Linköping University