Sökning: (LAR1:liu) pers:(Syväjärvi Mikael) pers:(Eriksson Jens) >
Progress in 3C-SiC ...
Progress in 3C-SiC growth and novel applications
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- Yakimova, Rositsa (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Vasiliauskas, Remigijus (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Eriksson, Jens (författare)
- Linköpings universitet,Biosensorer och bioelektronik,Tekniska högskolan
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visa fler...
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- Syväjärvi, Mikael (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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visa färre...
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(creator_code:org_t)
- Trans Tech Publications Inc. 2012
- 2012
- Engelska.
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Ingår i: Materials Science Forum Vol 711. - : Trans Tech Publications Inc.. ; , s. 3-10
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Ämnesord
Stäng
- Recent research efforts in growth of 3C-SiC are reviewed. Sublimation growth is addressed with an emphasis on the enhanced understanding of polytype stability in relation to growth conditions, such as supersaturation and Si/C ratio. It is shown that at low temperature/supersaturation spiral 6H-SiC growth is favored, which prepares the surface for 3C-SiC nucleation. Provided the supersaturation is high enough, 3C-SiC nucleates as two-dimensional islands on terraces of the homoepitaxial 6H-SiC. Effect of different substrate surface preparations is considered. Typical extended defects and their electrical activity is discussed. Finally, possible novel applications are outlined.
Nyckelord
- cubic SiC; nucleation control; supersaturation; sublimation growth; defects
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)