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Sökning: onr:"swepub:oai:DiVA.org:liu-91706" > Enhanced dynamic an...

  • Catarino, NInstituto Tecnológico e Nuclear/IST - Estrada Nacional 10, 2686-953 Sacavém, Portugal, EU (författare)

Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN

  • Artikel/kapitelEngelska2012

Förlag, utgivningsår, omfång ...

  • 2012-03-20
  • IOP Publishing,2012
  • printrdacarrier

Nummerbeteckningar

  • LIBRIS-ID:oai:DiVA.org:liu-91706
  • https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-91706URI
  • https://doi.org/10.1209/0295-5075/97/68004DOI

Kompletterande språkuppgifter

  • Språk:engelska
  • Sammanfattning på:engelska

Ingår i deldatabas

Klassifikation

  • Ämneskategori:ref swepub-contenttype
  • Ämneskategori:art swepub-publicationtype

Anmärkningar

  • The implantation damage build-up and optical activation of a-plane and c-plane GaN epitaxial films were compared upon 300 keV Eu implantation at room temperature. The implantation defects cause an expansion of the lattice normal to the surface, i.e. along the a-direction in a-plane and along the c-direction in c-plane GaN. The defect profile is bimodal with a pronounced surface damage peak and a second damage peak deeper in the bulk of the samples in both cases. For both surface orientations, the bulk damage saturates for high fluences. Interestingly, the saturation level for a-plane GaN is nearly three times lower than that for c-plane material suggesting very efficient dynamic annealing and strong resistance to radiation. a-plane GaN also shows superior damage recovery during post-implant annealing compared to c-plane GaN. For the lowest fluence, damage in a-plane GaN was fully removed and strong Eu-related red luminescence is observed. Although some residual damage remained after annealing for higher fluences as well as in all c-plane samples, optical activation was achieved in all samples revealing the red emission lines due to the 5D0→ 7F2transition in the Eu3+ ion. The presented results demonstrate a great promise for the use of ion beam processing for a-plane GaN based electronic devices as well as for the development of radiation tolerant electronics.

Ämnesord och genrebeteckningar

  • III-V semiconductors
  • Doping and impurity implantation
  • Cathodoluminescence
  • ionoluminescence

Biuppslag (personer, institutioner, konferenser, titlar ...)

  • Nogales, EDepartamento de Física de Materiales, Universidad Complutense - 28040 Madrid, Spain, EU (författare)
  • Franco, NInstituto Tecnológico e Nuclear/IST - Estrada Nacional 10, 2686-953 Sacavém, Portugal, EU and Centro de Física Nuclear da Universidade de Lisboa - Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal, EU (författare)
  • Darakchieva, VanyaInstituto Tecnol´ogico e Nuclear/IST, Sacavem, Portugal, EU; Centro de F´ısica Nuclear da Universidade de Lisboa - Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal, EU(Swepub:liu)vanda79 (författare)
  • Miranda, S. M. C.Instituto Tecnológico e Nuclear/IST - Estrada Nacional 10, 2686-953 Sacavém, Portugal, EU (författare)
  • Mendez, BDepartamento de Física de Materiales, Universidad Complutense - 28040 Madrid, Spain, EU (författare)
  • Alves, EInstituto Tecnológico e Nuclear/IST - Estrada Nacional 10, 2686-953 Sacavém, Portugal, EU and Centro de Física Nuclear da Universidade de Lisboa - Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal, EU (författare)
  • Marques, J. G.Instituto Tecnológico e Nuclear/IST - Estrada Nacional 10, 2686-953 Sacavém, Portugal, EU and Centro de Física Nuclear da Universidade de Lisboa - Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal, EU (författare)
  • Lorenz, KInstituto Tecnológico e Nuclear/IST - Estrada Nacional 10, 2686-953 Sacavém, Portugal, EU and Centro de Física Nuclear da Universidade de Lisboa - Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal, EU (författare)
  • Instituto Tecnológico e Nuclear/IST - Estrada Nacional 10, 2686-953 Sacavém, Portugal, EUDepartamento de Física de Materiales, Universidad Complutense - 28040 Madrid, Spain, EU (creator_code:org_t)

Sammanhörande titlar

  • Ingår i:Europhysics letters: IOP Publishing97:6, s. 68004-0295-50751286-4854

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