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Enhanced dynamic an...
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Catarino, NInstituto Tecnológico e Nuclear/IST - Estrada Nacional 10, 2686-953 Sacavém, Portugal, EU
(författare)
Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN
- Artikel/kapitelEngelska2012
Förlag, utgivningsår, omfång ...
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2012-03-20
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IOP Publishing,2012
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printrdacarrier
Nummerbeteckningar
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LIBRIS-ID:oai:DiVA.org:liu-91706
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-91706URI
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https://doi.org/10.1209/0295-5075/97/68004DOI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:ref swepub-contenttype
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Ämneskategori:art swepub-publicationtype
Anmärkningar
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The implantation damage build-up and optical activation of a-plane and c-plane GaN epitaxial films were compared upon 300 keV Eu implantation at room temperature. The implantation defects cause an expansion of the lattice normal to the surface, i.e. along the a-direction in a-plane and along the c-direction in c-plane GaN. The defect profile is bimodal with a pronounced surface damage peak and a second damage peak deeper in the bulk of the samples in both cases. For both surface orientations, the bulk damage saturates for high fluences. Interestingly, the saturation level for a-plane GaN is nearly three times lower than that for c-plane material suggesting very efficient dynamic annealing and strong resistance to radiation. a-plane GaN also shows superior damage recovery during post-implant annealing compared to c-plane GaN. For the lowest fluence, damage in a-plane GaN was fully removed and strong Eu-related red luminescence is observed. Although some residual damage remained after annealing for higher fluences as well as in all c-plane samples, optical activation was achieved in all samples revealing the red emission lines due to the 5D0→ 7F2transition in the Eu3+ ion. The presented results demonstrate a great promise for the use of ion beam processing for a-plane GaN based electronic devices as well as for the development of radiation tolerant electronics.
Ämnesord och genrebeteckningar
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III-V semiconductors
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Doping and impurity implantation
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Cathodoluminescence
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ionoluminescence
Biuppslag (personer, institutioner, konferenser, titlar ...)
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Nogales, EDepartamento de Física de Materiales, Universidad Complutense - 28040 Madrid, Spain, EU
(författare)
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Franco, NInstituto Tecnológico e Nuclear/IST - Estrada Nacional 10, 2686-953 Sacavém, Portugal, EU and Centro de Física Nuclear da Universidade de Lisboa - Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal, EU
(författare)
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Darakchieva, VanyaInstituto Tecnol´ogico e Nuclear/IST, Sacavem, Portugal, EU; Centro de F´ısica Nuclear da Universidade de Lisboa - Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal, EU(Swepub:liu)vanda79
(författare)
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Miranda, S. M. C.Instituto Tecnológico e Nuclear/IST - Estrada Nacional 10, 2686-953 Sacavém, Portugal, EU
(författare)
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Mendez, BDepartamento de Física de Materiales, Universidad Complutense - 28040 Madrid, Spain, EU
(författare)
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Alves, EInstituto Tecnológico e Nuclear/IST - Estrada Nacional 10, 2686-953 Sacavém, Portugal, EU and Centro de Física Nuclear da Universidade de Lisboa - Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal, EU
(författare)
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Marques, J. G.Instituto Tecnológico e Nuclear/IST - Estrada Nacional 10, 2686-953 Sacavém, Portugal, EU and Centro de Física Nuclear da Universidade de Lisboa - Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal, EU
(författare)
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Lorenz, KInstituto Tecnológico e Nuclear/IST - Estrada Nacional 10, 2686-953 Sacavém, Portugal, EU and Centro de Física Nuclear da Universidade de Lisboa - Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal, EU
(författare)
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Instituto Tecnológico e Nuclear/IST - Estrada Nacional 10, 2686-953 Sacavém, Portugal, EUDepartamento de Física de Materiales, Universidad Complutense - 28040 Madrid, Spain, EU
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:Europhysics letters: IOP Publishing97:6, s. 68004-0295-50751286-4854
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