The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN

• Issues of major relevance to the n-type conductivity of Al0.77Ga0.23N associated with Si and O incorporation, their shallow donor or deep donor level behavior, and carrier compensation are elucidated by allying (i) study of Si and O incorporation kinetics at high process temperature and low growth rate, and (ii) electron paramagnetic resonance measurements. The Al0.77Ga0.23N composition correlates to that Al content for which a drastic reduction of the conductivity of AlxGa1−xN is commonly reported. We note the incorporation of carbon, the role of which for the transport properties of AlxGa1−xN has not been widely discussed.

Nyckelord

aluminium compounds

electrical conductivity

gallium compounds

III-V semiconductors

impurity states

oxygen

paramagnetic resonance

silicon

wide band gap semiconductors

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