Sökning: WFRF:(Ivanov Ivan Gueorguiev)
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Photoluminescence o...
Photoluminescence of 8H-SiC
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- Henry, Anne (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Gueorguiev Ivanov, Ivan (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Janzén, Erik (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Hatayama, Tomoaki (författare)
- Nara Institute of Science and Technology, Japan
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- Yano, Hiroshi (författare)
- Nara Institute of Science and Technology, Japan
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- Fuyuki, Takashi (författare)
- Nara Institute of Science and Technology, Japan
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(creator_code:org_t)
- Trans Tech Publications, 2013
- 2013
- Engelska.
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Ingår i: Silicon Carbide and Related Materials 2012. - : Trans Tech Publications. - 9783037856246 ; , s. 347-350
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Ämnesord
Stäng
- 8H-SiC epilayers grown on small 8H-SiC Lely platelets are investigated optically using photoluminescence spectroscopy. At low temperature the near band gap emission detected in the 2.78 to 2.67 eV range contains sharp lines associated to nitrogen-bound-exciton recombination. Three different no-phonon lines are detected accompanied by their phonon replicas. Free-exciton replicas are also observed which allows the determination of the excitonic band gap. The binding energy of the bound excitons can thus be determined and the ionization energies of the three nitrogen levels in 8H-SiC are estimated and found to be rather shallow compared to the values for other hexagonal polytypes. Additional bound-exciton lines are observed when the experimental photoluminescence temperature is increased.
Nyckelord
- 8H-SiC; photoluminescence; excitonic band gap; ionization energies
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)
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