Magnetron sputtering of epitaxial ZrB2 thin films on 4H-SiC(0001) and Si(111)

• Epitaxial ZrB2 thin films were deposited at a temperature of 900 °C on 4H-SiC(0001) and Si(111) substrates by magnetron sputtering from a ZrB2 source at high rate ~80 nm/min. The films were analyzed by thin film X-ray diffraction including pole figure measurements and reciprocal space mapping as well as high resolution electron microscopy.

Nyckelord

Zirconium diboride Epitaxial growth Silicon carbide Thin films Magnetron sputtering

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