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Magnetic anisotropy...
Magnetic anisotropy of single Mn acceptors in GaAs in an external magnetic field
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- Bozkurt, M. (författare)
- Photonics and Semiconductor Nanophysics, Department of Applied Physics, Eindhoven University of Technology, P. O. Box 513, NL-5600 MB Eindhoven, The Netherlands
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- Mahani, Mohammad Reza (författare)
- Linnéuniversitetet,Institutionen för fysik och elektroteknik (IFE)
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- Studer, P. (författare)
- London Center for NanoTechnology, 17-19 Gordon Street, WC1H 0AH, London, U.K.
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- Tang, J.-M. (författare)
- 5Department of Physics, University of New Hampshire, Durham, New Hampshire 03824-3520, USA
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- Schofield, S. (författare)
- London Center for NanoTechnology, 17-19 Gordon Street, WC1H 0AH, London, U.K.
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- Curson, N. (författare)
- London Center for NanoTechnology, 17-19 Gordon Street, WC1H 0AH, London, U.K.
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- Flatt’e, M.E. (författare)
- Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242-1479,U.S.A.
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- Silov, A.Yu. (författare)
- Photonics and Semiconductor Nanophysics, Department of Applied Physics, Eindhoven University of Technology, P. O. Box 513, NL-5600 MB Eindhoven, The Netherlands
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- Hirjibehedin, C. F. (författare)
- Department of Chemistry, UCL, London, WC1H 0AJ, United Kingdom
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- Canali, Carlo M. (författare)
- Linnéuniversitetet,Institutionen för fysik och elektroteknik (IFE)
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- Koenraad, P.M. (författare)
- Photonics and Semiconductor Nanophysics, Department of Applied Physics, Eindhoven University of Technology, P. O. Box 513, NL-5600 MB Eindhoven, The Netherlands
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Photonics and Semiconductor Nanophysics, Department of Applied Physics, Eindhoven University of Technology, P O. Box 513, NL-5600 MB Eindhoven, The Netherlands Institutionen för fysik och elektroteknik (IFE) (creator_code:org_t)
- American Physical society, 2013
- 2013
- Engelska.
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical society. - 1098-0121 .- 1550-235X. ; 88, s. Article ID: 205203-
- Relaterad länk:
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http://prb.aps.org/a...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We investigate the effect of an external magnetic field on the physical properties of the acceptor hole statesassociated with single Mn acceptors placed near the (110) surface of GaAs. Cross-sectional scanning tunnelingmicroscopy images of the acceptor local density of states (LDOS) show that the strongly anisotropic hole wavefunction is not significantly affected by a magnetic field up to 6 T. These experimental results are supported bytheoretical calculations based on a tight-binding model of Mn acceptors in GaAs. For Mn acceptors on the (110)surface and the subsurfaces immediately underneath, we find that an applied magnetic field modifies significantlythe magnetic anisotropy landscape. However, the acceptor hole wave function is strongly localized around theMn and the LDOS is quite independent of the direction of the Mn magnetic moment. On the other hand, for Mnacceptors placed on deeper layers below the surface, the acceptor hole wave function is more delocalized andthe corresponding LDOS is much more sensitive on the direction of the Mn magnetic moment. However, themagnetic anisotropy energy for these magnetic impurities is large (up to 15 meV), and a magnetic field of 10 Tcan hardly change the landscape and rotate the direction of the Mn magnetic moment away from its easy axis.We predict that substantially larger magnetic fields are required to observe a significant field dependence of thetunneling current for impurities located several layers below the GaAs surface.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- Condensed Matter Physics
- Kondenserade materians fysik
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Bozkurt, M.
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Mahani, Mohammad ...
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Studer, P.
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Tang, J.-M.
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Schofield, S.
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Curson, N.
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Flatt’e, M.E.
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Silov, A.Yu.
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Hirjibehedin, C. ...
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Canali, Carlo M.
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Koenraad, P.M.
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visa färre...
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