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Deep acceptors trap...
Deep acceptors trapped at threading-edge dislocations in GaN
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- Elsner, J. (author)
- Department of Physics, University of Exeter, Exeter, United Kingdom; Technische Universität, Theoretische Physik III, Chemnitz, Germany
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- Jones, R. (author)
- Department of Physics, University of Exeter, Exeter, United Kingdom
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- Heggie, M. I. (author)
- CPES, University of Sussex, Brighton, United Kingdom
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- Sitch, P. K. (author)
- Technische Universität, Theoretische Physik III, Chemnitz, Germany
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- Haugk, M. (author)
- Technische Universität, Theoretische Physik III, Chemnitz, Germany
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- Frauenheim, Th. (author)
- Technische Universität, Theoretische Physik III, Chemnitz, Germany
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- Öberg, Sven (author)
- Luleå tekniska universitet,Matematiska vetenskaper
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- Briddon, P. R. (author)
- Department of Physics, University of Newcastle upon Tyne, Newcastle, United Kingdom
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(creator_code:org_t)
- 1998
- 1998
- English.
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In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 58:19, s. 12571-12574
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
Close
- Local-density-functional methods are used to examine the behavior of the oxygen defect, gallium vacancy, and related defect complexes trapped at threading-edge dislocations in GaN. These defects are found to be particularly stable at the core of the dislocation where oxygen sits twofold coordinated in a bridge position. VGa-ON is found to be a deep double acceptor, VGa-(ON)2 is a deep single acceptor, and VGa-(ON)3 at the dislocation core is electrically inactive. We suggest that the first two defects are responsible for a deep acceptor level associated with the midgap yellow luminescence band.
Subject headings
- NATURVETENSKAP -- Matematik -- Beräkningsmatematik (hsv//swe)
- NATURAL SCIENCES -- Mathematics -- Computational Mathematics (hsv//eng)
Keyword
- Scientific Computing
- Teknisk-vetenskapliga beräkningar
Publication and Content Type
- ref (subject category)
- art (subject category)
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