The bonding of CAs acceptors in InxGa1-xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon

Ashwin, M.J.Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Technology and Medicine, London (författare)

Godkänd; 1996; 20090514 (andbra)
InxGa1-xAs layers (0≤x≤0.37) doped with carbon (>1020 cm-3) were grown on semi-insulating GaAs substrates by chemical beam epitaxy using carbon tetrabromide (CBr4) as the dopant source. Hall measurements imply that all of the carbon was present as CAs for values x up to 0.15. The C acceptors were passivated by exposing samples to a radio frequency hydrogen plasma for periods of up to 6 h. The nearest-neighbor bonding configurations of CAs were investigated by studying the nondegenerate antisymmetric hydrogen stretch mode (A-1 symmetry) and the symmetric XH mode (A+1 symmetry) of the H-CAs pairs using IR absorption and Raman scattering, respectively. Observed modes at 2635 and 450 cm-1 had been assigned to passivated Ga4CAs clusters. New modes at 2550 and 430 cm-1 increased in strength with increasing values of x and are assigned to passivated InGa3CAs clusters. These results were compared with ab initio local density functional theory. Modes due to AlInGaCAs clusters were detected in samples containing grown in Al and In. These results demonstrate that for InGaAs, CBr4 is an efficient C doping source since both In-CAs bonds as well as Ga-CAs bonds are formed, whereas there is no evidence for the formation of In-CAs bonds in samples doped with C derived from trimethylgallium or solid sources

Pritchard, R.E.Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Technology and Medicine, London (författare)
Newman, R.C.Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Technology and Medicine, London (författare)
Joyce, T.B.Department of Materials Science and Engineering, Liverpool University (författare)
Bullough, T.J.Department of Materials Science and Engineering, Liverpool University (författare)
Wagner, J.Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg (författare)
Jeynes, C.Department of Electronic and Electrical Engineering, University of Surrey, Guildford (författare)
Breuer, S.J.Department of Physics, University of Exeter (författare)
Jones, R.Department of Physics, University of Exeter (författare)
Briddon, P.R.Department of Physics, University of Newcastle (författare)
Öberg, SvenLuleå tekniska universitet,Matematiska vetenskaper(Swepub:ltu)oberg (författare)
Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Technology and Medicine, LondonDepartment of Materials Science and Engineering, Liverpool University (creator_code:org_t)

Ingår i:Journal of Applied Physics: AIP Publishing80:12, s. 6754-67600021-89791089-7550

Av författaren/redakt...: Ashwin, M.J.; Pritchard, R.E.; Newman, R.C.; Joyce, T.B.; Bullough, T.J.; Wagner, J.; visa fler...; Jeynes, C.; Breuer, S.J.; Jones, R.; Briddon, P.R.; Öberg, Sven; visa färre...

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