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Comment on "Role played by N and N-N impurities in type-IV semiconductors"

Rasmussen, F Berg (author)
University of Aarhus
Nielsen, B Bech (author)
University of Aarhus
Jones, R (author)
University of Exeter
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Öberg, Sven (author)
Luleå tekniska universitet,Matematiska vetenskaper
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 (creator_code:org_t)
1995
1995
English.
In: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 51:20, s. 14756-14757
  • Journal article (other academic/artistic)
Abstract Subject headings
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  • In a recent paper [Phys. Rev. B 48, 17 806 (1993)] Cunha, Canuto, and Fazzio reported ab initio Hartree-Fock calculations on nitrogen impurities in group-IV semiconductors. In their paper it is suggested that nitrogen pairs form from substitutional atoms on adjacent lattice sites. However, the experimentally observed configuration in silicon and germanium is different from this. The aim of this Comment is to clarify the situation of the nitrogen pair in these materials.

Subject headings

NATURVETENSKAP  -- Matematik -- Beräkningsmatematik (hsv//swe)
NATURAL SCIENCES  -- Mathematics -- Computational Mathematics (hsv//eng)

Keyword

Scientific Computing
Teknisk-vetenskapliga beräkningar

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vet (subject category)
art (subject category)

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Rasmussen, F Ber ...
Nielsen, B Bech
Jones, R
Öberg, Sven
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NATURAL SCIENCES
NATURAL SCIENCES
and Mathematics
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Luleå University of Technology

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