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Interstitial-carbon hydrogen interaction in silicon

Safonov, A N (author)
King's College London
Lightowlers, E C (author)
King's College London
Davies, Gordon (author)
King's College London
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Leary, P (author)
University of Exeter
Jones, R (author)
University of Exeter
Öberg, Sven (author)
Luleå tekniska universitet,Matematiska vetenskaper
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 (creator_code:org_t)
1996
1996
English.
In: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 77:23, s. 4812-4815
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • The T-line luminescence system is created in Si by annealing at 400-600 °C. Shifts and splitting of the spectral features with 13C and D isotope substitution identify the presence of two C atoms and one H atom in the center. Uniaxial stress and magnetic field measurements show that the T center has monoclinic I symmetry and possesses an acceptor ( -/0) level at 0.2 eV below the conduction band. Ab initio cluster calculations lead to a structure in which an interstitial C-H defect binds with a substitutional C atom. The calculated vibrational modes are in good agreement with those observed.

Subject headings

NATURVETENSKAP  -- Matematik -- Beräkningsmatematik (hsv//swe)
NATURAL SCIENCES  -- Mathematics -- Computational Mathematics (hsv//eng)

Keyword

Scientific Computing
Teknisk-vetenskapliga beräkningar

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