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- Budde, M.Institute of Physics and Astronomy, University of Aarhus, Denmark (author)
The hydrogen-saturated self-interstitial in silicon and germanium
- Article/chapterEnglish1997
Publisher, publication year, extent ...
- Trans Tech Publications Inc.1997
- printrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:ltu-32196
- https://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-32196URI
- https://doi.org/10.4028/www.scientific.net/MSF.258-263.35DOI
Supplementary language notes
- Language:English
- Summary in:English
Part of subdatabase
- SwePubSwePub
Classification
Notes
- Godkänd; 1997; 20090206 (andbra)
- Infrared absorption spectroscopy is used to study H-related point defects in H+-implanted Si (Si:H) and Ge (Ge:H). The absorption lines at 743.1, 748.0, 1986.5 and 1989.4 cm-1 in Si:H and at 700.3, 705.5, 1881.8 and 1883.5 cm-1 in Ge:H are shown to originate from the same defect containing two equivalent H atoms. Uniaxial stress experiments show that the defects have monoclinic-II symmetry, and the orientations of the two Si-H or Ge-H bonds are determined. The structure and the local vibrational modes of the self-interstitial binding two H atoms (IH2) are calculated with LDF cluster theory. The symmetry, bond-orientations and isotopic frequency-shifts calculated for IH2 are in excellent agreement with those observed for the 743.1-, 748.0-, 1986.5- and 1989.4-cm-1 modes in Si:H and for the 700.3-, 705.5-, 1881.8- and 1883.5-cm-1 modes in Ge:H.
Subject headings and genre
- NATURVETENSKAP Matematik Beräkningsmatematik hsv//swe
- NATURAL SCIENCES Mathematics Computational Mathematics hsv//eng
- Scientific Computing
- Teknisk-vetenskapliga beräkningar
Added entries (persons, corporate bodies, meetings, titles ...)
- Nielsen, B. BachInstitute of Physics and Astronomy, University of Aarhus, Denmark (author)
- Leary, P.Department of Physics, University of Exeter, United Kingdom (author)
- Goss, J.Department of Physics, University of Exeter, United Kingdom (author)
- Jones, R.Department of Physics, University of Exeter, United Kingdom (author)
- Briddon, P.R.Department of Physics, University of Newcastle Upon Tyne, United Kingdom (author)
- Öberg, SvenLuleå tekniska universitet,Matematiska vetenskaper(Swepub:ltu)oberg (author)
- Breuer, S.J.Edinburgh Parallel Computing Centre, University of Edinburgh, United Kingdom (author)
- Institute of Physics and Astronomy, University of Aarhus, DenmarkDepartment of Physics, University of Exeter, United Kingdom (creator_code:org_t)
Related titles
- In:Defects in semiconductors: Trans Tech Publications Inc., s. 35-40
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