Sökning: WFRF:(Christensen P S)
> (2000-2004) >
Tin-vacancy accepto...
Tin-vacancy acceptor levels in electron-irradiated n-type silicon
-
- Nylandsted Larsen, A. (författare)
- Institute of Physics and Astronomy, University of Aarhus, Aarhus, Denmark
-
- Goubet, J. J. (författare)
- Institute of Physics and Astronomy, University of Aarhus, Aarhus, Denmark
-
- Mejlholm, P. (författare)
- Institute of Physics and Astronomy, University of Aarhus, Aarhus, Denmark
-
visa fler...
-
- Sherman Christensen, J. (författare)
- Institute of Physics and Astronomy, University of Aarhus, Aarhus, Denmark
-
- Fanciulli, M. (författare)
- Institute of Physics and Astronomy, University of Aarhus, Aarhus, Denmark
-
- Gunnlaugsson, H. P. (författare)
- Institute of Physics and Astronomy, University of Aarhus, Aarhus, Denmark
-
- Weyer, G. (författare)
- Institute of Physics and Astronomy, University of Aarhus, Aarhus, Denmark
-
- Wulff Petersen, J. (författare)
- The Mikroelectronic Center, The Technical University of Denmark, Lyngby, Denmark
-
- Resende, A. (författare)
- School of Physics, University of Exeter, Exeter, United Kingdom
-
- Kaukoen, K. (författare)
- School of Physics, University of Exeter, Exeter, United Kingdom
-
- Jones, R. (författare)
- School of Physics, University of Exeter, Exeter, United Kingdom
-
- Öberg, Sven (författare)
- Luleå tekniska universitet,Matematiska vetenskaper
-
- Briddon, P. R. (författare)
- Department of Physics, University of Newcastle upon Tyne, Newcastle upon Tyne, United Kingdom
-
- Svensson, B. G. (författare)
- Solid State Electronics, The Royal Institute of Technology, Kista-Stockholm, Sweden
-
- Lindström, J. L. (författare)
- Solid State Physics, University of Lund, Lund, Sweden
-
- Dannefaer, S. (författare)
- Department of Physics, University of Winnipeg, Winnipeg, Manitoba, Canada
-
visa färre...
-
(creator_code:org_t)
- 2000
- 2000
- Engelska.
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 62:7, s. 4535-4544
- Relaterad länk:
-
https://urn.kb.se/re...
-
visa fler...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- Si crystals (n-type, fz) with doping levels between 1.5×1014 and 2×1016 cm-3 containing in addition ∼1018 Sn/cm3 were irradiated with 2-MeV electrons to different doses and subsequently studied by deep level transient spectroscopy, Mössbauer spectroscopy, and positron annihilation. Two tin-vacancy (Sn-V) levels at Ec-0.214 eV and Ec-0.501 eV have been identified (Ec denotes the conduction band edge). Based on investigations of the temperature dependence of the electron-capture cross sections, the electric-field dependence of the electron emissivity, the anneal temperature, and the defect-introduction rate, it is concluded that these levels are the double and single acceptor levels, respectively, of the Sn-V pair. These conclusions are in agreement with electronic structure calculations carried out using a local spin-density functional theory, incorporating pseudopotentials to eliminate the core electrons, and applied to large H-terminated clusters. Thus, the Sn-V pair in Si has five different charge states corresponding to four levels in the band gap.
Ämnesord
- NATURVETENSKAP -- Matematik -- Beräkningsmatematik (hsv//swe)
- NATURAL SCIENCES -- Mathematics -- Computational Mathematics (hsv//eng)
Nyckelord
- Scientific Computing
- Teknisk-vetenskapliga beräkningar
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas
- Av författaren/redakt...
-
Nylandsted Larse ...
-
Goubet, J. J.
-
Mejlholm, P.
-
Sherman Christen ...
-
Fanciulli, M.
-
Gunnlaugsson, H. ...
-
visa fler...
-
Weyer, G.
-
Wulff Petersen, ...
-
Resende, A.
-
Kaukoen, K.
-
Jones, R.
-
Öberg, Sven
-
Briddon, P. R.
-
Svensson, B. G.
-
Lindström, J. L.
-
Dannefaer, S.
-
visa färre...
- Om ämnet
-
- NATURVETENSKAP
-
NATURVETENSKAP
-
och Matematik
-
och Beräkningsmatema ...
- Artiklar i publikationen
-
Physical Review ...
- Av lärosätet
-
Luleå tekniska universitet