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  • Abadei, S.Department of Microelectronics, Chalmers University of Technology, Gothenburg, Sweden (author)

DC field dependent properties of Na0.5 K0.5 NbO3/SiO2/Si structures at millimeter-wave frequencies

  • Article/chapterEnglish2001

Publisher, publication year, extent ...

  • AIP Publishing,2001
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:ltu-3894
  • https://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-3894URI
  • https://doi.org/10.1063/1.1353838DOI

Supplementary language notes

  • Language:English
  • Summary in:English

Part of subdatabase

Classification

  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • Validerad; 2001; 20060917 (cira)
  • Dielectric properties of laser-ablated 0.5-μm-thick c-axis epitaxial Na0.5K0.5NbO3 films on high-resistivity (7.7 Ω cm) silicon SiO2/Si substrate are studied experimentally at frequencies up to 40 GHz. For measurements, planar 0.5-μm-thick gold electrodes (interdigital and straight slot) are photolithography defined on the top surface of Na0.5K0.5NbO3 films. The slot width between the electrodes is 2 or 4 μm. 13% capacitance change at 40 V dc bias and Q factor more than 15 are observed at 40 GHz, which makes the structure useful for applications in electrically tunable millimeter-wave devices

Subject headings and genre

Added entries (persons, corporate bodies, meetings, titles ...)

  • Gevorgian, SDepartment of Microelectronics, Chalmers University of Technology, Gothenburg, Sweden;Core Unit Research Center, Ericsson Microwave Systems, Mölndal, Sweden (author)
  • Cho, C.-RDepartment of Condensed Matter Physics, Royal Institute of Technology, Stockholm, Sweden (author)
  • Grishin, A.Department of Condensed Matter Physics, Royal Institute of Technology, Stockholm, Sweden (author)
  • Andreasson, JohannaLuleå tekniska universitet (author)
  • Lindbäck, TureLuleå tekniska universitet(Swepub:ltu)ture (author)
  • Department of Microelectronics, Chalmers University of Technology, Gothenburg, SwedenDepartment of Microelectronics, Chalmers University of Technology, Gothenburg, Sweden;Core Unit Research Center, Ericsson Microwave Systems, Mölndal, Sweden (creator_code:org_t)

Related titles

  • In:Applied Physics Letters: AIP Publishing78:13, s. 1900-19020003-69511077-3118

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