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Intrinsic defects in CdTe and CdZnTe alloys

Carvalho, A. (author)
Swiss Federal Institute of Technology
Tagantsev, A. (author)
Swiss Federal Institute of Technology
Öberg, Sven (author)
Luleå tekniska universitet,Matematiska vetenskaper
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Briddon, P.R. (author)
University of Newcastle Upon Tyne
Setter, N. (author)
Swiss Federal Institute of Technology
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 (creator_code:org_t)
Elsevier BV, 2009
2009
English.
In: Physica. B, Condensed matter. - : Elsevier BV. - 0921-4526 .- 1873-2135. ; 404:23-24, s. 5019-5021
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • The Cd vacancy (VCd) and Te anti-site (TeCd) are two dominant defects in CdTe and CdZnTe alloys grown in Terich conditions. We examine the properties of these two intrinsic defects in Cd1-xZnxTe alloys with x < 0:5 using first-principles calculations. It is shown that Cd vacancies become progressively more favourable with increasing Zn content, in contrast with Te anti-sites, which show the opposite behaviour, explaining the trend towards p-type conductivity in Cd1-xZnxTe.

Subject headings

NATURVETENSKAP  -- Matematik -- Beräkningsmatematik (hsv//swe)
NATURAL SCIENCES  -- Mathematics -- Computational Mathematics (hsv//eng)

Keyword

Scientific Computing
Teknisk-vetenskapliga beräkningar

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Carvalho, A.
Tagantsev, A.
Öberg, Sven
Briddon, P.R.
Setter, N.
About the subject
NATURAL SCIENCES
NATURAL SCIENCES
and Mathematics
and Computational Ma ...
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Physica. B, Cond ...
By the university
Luleå University of Technology

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