Dislocations in hexagonal and cubic GaN

Validerad; 2000; 20080526 (cira)
The structure and electronic activity of several types of dislocations in both hexagonal and cubic GaN are calculated using first-principles methods. Most of the stoichiometric dislocations investigated in hexagonal GaN do not induce deep acceptor states and thus cannot be responsible for the yellow luminescence. However, it is shown that electrically active point defects, in particular gallium vacancies and oxygen-related defect complexes, can be trapped at the stress field of the dislocations and may be responsible for this luminescence. For cubic GaN, we find the ideal stoichiometric 60° dislocation to be electrically active and the glide set to be more stable than the shuffle. The dissociation of the latter is considered

Elsner, J.University of Exeter (författare)
Jones, R.University of Exeter (författare)
Heggie, M.I.University of Sussex (författare)
Öberg, SvenLuleå tekniska universitet,Matematiska vetenskaper(Swepub:ltu)oberg (författare)
Frauenheim, T.Universität Paderborn (författare)
Briddon, P.R.University of Newcastle Upon Tyne (författare)
University of ExeterUniversity of Sussex (creator_code:org_t)

Av författaren/redakt...: Blumenau, A.T.; Elsner, J.; Jones, R.; Heggie, M.I.; Öberg, Sven; Frauenheim, T.; visa fler...; Briddon, P.R.; visa färre...

Om ämnet

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.