Early stage donor-vacancy clusters in germanium

Validerad; 2007; 20070927 (bajo)
There is considerable experimental evidence that vacancies in Ge dominate several solid state reactions that range from self-diffusivity to metal and dopant transport. It is therefore vital that we fully understand how vacancies interact with other point defects in Ge. Here we have a look at the properties of small donor-vacancy (Sb n V m with m,n ≤ 2) complexes in Ge by ab-initio density functional modeling. Particular attention has been payed to binding energies and to the electronic activity of the complexes. We found that all aggregates may contribute to the n→ p type conversion that is typically observed under prolonged MeV irradiation conditions. In general, Sb n V m defects are double acceptors. It is also suggested that spontaneous formation of Sb3V complexes may limit the activation level of donors introduced by ion implantation.

Torres, Vitor J. B.University of Aveiro (author)
Öberg, SvenLuleå tekniska universitet,Matematiska vetenskaper(Swepub:ltu)oberg (author)
Carvalho, AlexandraUniversity of Exeter (author)
Janke, ColinUniversity of Exeter (author)
Jones, RobertUniversity of Exeter (author)
Briddon, Patrick R.University of Newcastle Upon Tyne (author)
University of AveiroMatematiska vetenskaper (creator_code:org_t)

In:Journal of materials science. Materials in electronics: Springer Science and Business Media LLC18:7, s. 769-7730957-45221573-482X

By the author/editor: Coutinho, Jose; Torres, Vitor J. ...; Öberg, Sven; Carvalho, Alexan ...; Janke, Colin; Jones, Robert; show more...; Briddon, Patrick ...; show less...

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NATURAL SCIENCES: NATURAL SCIENCES; and Mathematics; and Computational Ma ...

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