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Epitaxial Growth an...
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Yang, Chih-WenPhysical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
(författare)
Epitaxial Growth and Determination of Band Alignment of Bi2Te3–WSe2 Vertical van der Waals Heterojunctions
- Artikel/kapitelEngelska2020
Förlag, utgivningsår, omfång ...
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2020-09-14
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American Chemical Society (ACS),2020
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printrdacarrier
Nummerbeteckningar
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LIBRIS-ID:oai:DiVA.org:ltu-81359
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https://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-81359URI
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https://doi.org/10.1021/acsmaterialslett.0c00254DOI
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https://urn.kb.se/resolve?urn=urn:nbn:se:lnu:diva-108516URI
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Språk:engelska
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Sammanfattning på:engelska
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Klassifikation
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Ämneskategori:ref swepub-contenttype
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Ämneskategori:art swepub-publicationtype
Anmärkningar
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Validerad;2020;Nivå 2;2020-11-10 (johcin)
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Artificial heterojunctions formed by vertical stacking of dissimilar two-dimensional (2D) transition metal dichalcogenide (TMD) monolayer materials in a chosen sequence hold tantalizing prospects for futuristic atomically thin circuits. The emergence of 2D topological insulators (TI), including Bi2Te3, Bi2Se3, and Sb2Te3, represents a new class of 2D building blocks and can complement the existing artificial heterojunctions as a result of their intriguing surface states protected by the time-reversal symmetry. However, the determination of band alignments of such 2D TI/TMD vertical heterojunctions, the key parameter for designing HJ-based electronic/photonic devices, which lies in the development of epitaxy growth, remains in its infancy. Here, we demonstrate the epitaxy growth of 2D TI/TMD vertical heterojunctions comprised of Bi2Te3/WSe2 with atomically clean interfaces that are spectroscopically accessible, and theoretically tractable. Cross-sectional scanning transmission electron microscopy (STEM) images and the presence of interlayer-coupled characteristics from Raman spectroscopy collectively confirm the neat stacking of Bi2Te3/WSe2 with the absence of unwanted containments. Microbeam X-ray photoelectron spectroscopy (ΌXPS) measurement coupled with the density functional theory (DFT) calculations and electrical characteristics of field effect transistors quantitatively reveals the type-II alignment of vertically stacked of quintuple layers (QL) Bi2Te3/WSe2. Meanwhile, the type-III band emerges when transitioning to multi-quintuple layer (MQL) Bi2Te3/WSe2. The finding here provides a well-defined example of the epitaxy growth paradigm, the interlayer coupling-electronic properties relationship, for these emerging 2D TI/TMDs vertical heterojunctions. © 2020 American Chemical Society.
Ämnesord och genrebeteckningar
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NATURVETENSKAP Fysik Annan fysik hsv//swe
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NATURAL SCIENCES Physical Sciences Other Physics Topics hsv//eng
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Alignment
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Density functional theory
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Electric field effects
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Electronic properties
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Field effect transistors
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Heterojunctions
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High resolution transmission electron microscopy
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Scanning electron microscopy
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Transition metals
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Van der Waals forces
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X ray photoelectron spectroscopy
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Cross-sectional scanning
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Electrical characteristic
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Electronic/photonic devices
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Interlayer coupling
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Time reversal symmetries
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Transition metal dichalcogenides
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Two Dimensional (2 D)
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Vertical stacking
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Bismuth compounds
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Applied Physics
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Tillämpad fysik
Biuppslag (personer, institutioner, konferenser, titlar ...)
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Tang, Hao-LingPhysical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States,King Abdullah University of Science & Technology (KAUST), Saudi Arabia;Massachusetts Institute of Technology, USA
(författare)
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Sattar, ShahidLuleå tekniska universitet,Materialvetenskap,Luleå University of Technology, Sweden(Swepub:ltu)shasat
(författare)
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Chiu, Ming-HuiPhysical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States,King Abdullah University of Science & Technology (KAUST), Saudi Arabia;Massachusetts Institute of Technology, USA
(författare)
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Wan, YiPhysical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
(författare)
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Chen, Chia-HaoNational Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
(författare)
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Kong, JingDepartment of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States,Massachusetts Institute of Technology, USA,Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia Department of Electronic Engineering, and Green Technology Research Center, Chang-Gung University, Taoyuan 333, Taiwan
(författare)
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Huang, Kuo-WeiPhysical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
(författare)
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Li, Lain-JongPhysical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia Department of Electronic Engineering, and Green Technology Research Center, Chang-Gung University, Taoyuan 333, Taiwan
(författare)
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Tung, VincentPhysical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
(författare)
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Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaPhysical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:ACS Materials Letters: American Chemical Society (ACS)2:10, s. 1351-13592639-4979
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Yang, Chih-Wen
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Tang, Hao-Ling
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Sattar, Shahid
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Chiu, Ming-Hui
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Wan, Yi
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Chen, Chia-Hao
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Kong, Jing
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Huang, Kuo-Wei
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Li, Lain-Jong
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Tung, Vincent
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