Temperature Modulating Fermi Level Pinning in 2D GeSe for High‐Performance Transistor

↓ Direkt till sidans innehåll
↓ Direkt till sidans sekundära innehåll (sidomenyn)

Sökning: WFRF:(Abbas Muhammad) > (2020-2024) > Temperature Modulat...

Muhammad, ZahirHefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China (författare)

Temperature Modulating Fermi Level Pinning in 2D GeSe for High‐Performance Transistor

Artikel/kapitelEngelska2022

Förlag, utgivningsår, omfång ...

2022-02-09
John Wiley & Sons,2022
printrdacarrier

Nummerbeteckningar

LIBRIS-ID:oai:DiVA.org:ltu-89207
https://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-89207URI
https://doi.org/10.1002/aelm.202101112DOI

Kompletterande språkuppgifter

Språk:engelska
Sammanfattning på:engelska

Ingår i deldatabas

SwePubSwePub

Klassifikation

Ämneskategori:ref swepub-contenttype
Ämneskategori:art swepub-publicationtype

Anmärkningar

Validerad;2022;Nivå 2;2022-08-19 (hanlid);Funder: National Natural Science Foundation of China (62150410438, 61627813, 61971024, 52103297, 62104154); International Collaboration Project (B16001), Beihang Hefei Innovation Research Institute (BHKX-19-02); Guangdong Provincial Department of Science and Technology (2019A1515110702, 2020A1515011425, 2021A1515012569)
2D layered germanium selenide (GeSe) material possesses in-plane anisotropy because of low-symmetry crystal structure with a new degree of freedom for enhanced optical and electronic properties. However, their systematic vibrational and electronics properties are still under the scope to study. Herein, the vibrational properties of GeSe sheets are studied by Raman spectroscopy. Whereas, the temperature-dependent electronic band structure is studied using angle-resolved photoemission spectroscopy (ARPES) combined with density functional theory calculations. Moreover, the field-effect transistor (FET) is fabricated on a few-layer GeSe with high performance. The vibrational modes (Formula presented.) and (Formula presented.) demonstrates linear softening as the temperature increases, with temperature coefficient value associated by anharmonic phonon–phonon/electron coupling. Besides, the enhanced dielectric screening effect of long-range Coulomb and interlayer interaction is observed from bulk to monolayer. Similarly, ARPES results further show Fermi level movement toward the valance band as increased temperature represents hole doping to pining the Fermi level, which indicates superior carrier concentration for electronic properties. The fabricated FET device on six layers GeSe exhibits high carrier mobility of 52.89 cm2 V−1 s−1 with an on/off ratio above 4 × 105 at room temperature, while it decreased below the room temperature. Our results provide the important figure of merit for GeSe-based novel nanoelectronic and thermoelectric devices.

Ämnesord och genrebeteckningar

NATURVETENSKAP Fysik Den kondenserade materiens fysik hsv//swe
NATURAL SCIENCES Physical Sciences Condensed Matter Physics hsv//eng
NATURVETENSKAP Kemi Fysikalisk kemi hsv//swe
NATURAL SCIENCES Chemical Sciences Physical Chemistry hsv//eng
angle-resolved photoemission spectroscopy
density functional theory
field-effect transistors
germanium selenide
Raman scattering
Applied Physics
Tillämpad fysik

Biuppslag (personer, institutioner, konferenser, titlar ...)

Li, YuliangNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China (författare)
Abbas, GhulamLuleå tekniska universitet,Materialvetenskap(Swepub:ltu)abbgil (författare)
Usman, MuhammadCollege of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China (författare)
Sun, ZheNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China (författare)
Zhang, YueHefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China (författare)
Lv, ZiyuCollege of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China (författare)
Wang, YanHefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China (författare)
Zhao, WeishengHefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China (författare)
Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. ChinaNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China (creator_code:org_t)

Sammanhörande titlar

Ingår i:Advanced Electronic Materials: John Wiley & Sons8:72199-160X

Internetlänk

Hitta via bibliotek

Advanced Electronic Materials (Sök värdpublikationen i LIBRIS)

Till lärosätets databas

Hitta mer i SwePub

Av författaren/redakt...: Muhammad, Zahir; Li, Yuliang; Abbas, Ghulam; Usman, Muhammad; Sun, Zhe; Zhang, Yue; visa fler...; Lv, Ziyu; Wang, Yan; Zhao, Weisheng; visa färre...

Om ämnet

NATURVETENSKAP: NATURVETENSKAP; och Fysik; och Den kondenserade ...

NATURVETENSKAP: NATURVETENSKAP; och Kemi; och Fysikalisk kemi

Artiklar i publikationen: Advanced Electro ...

Av lärosätet: Luleå tekniska universitet

Sök utanför SwePub

Sök vidare i:: Google; Google Book Search; Google Scholar

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

LIBRIS.kb.se