The Effect of Different Transport Models in Simulation of High Frequency 4H-SiC and 6H-SiC Vertical MESFETs

• A full band Monte Carlo (MC) study of the high frequency performance of a 4H-SiC Short channel vertical MESFET is presented. The MC model used is based on data from a full potential band structure calculation using the local density approximation to the density functional theory. The MC results have been compared with simulations using state of the art drift-diffusion and hydrodynamic transport models. Transport parameters such as mobility, saturation velocity and energy relaxation time are extracted from MC simulations

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

4H-SiC

6H-SiC

vertical MESFET

Electrical engineering, electronics and photonics

Elektroteknik, elektronik och fotonik

NATURAL SCIENCES

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)