Optimization of 2H, 4H and 6H-SiC high-speed vertical MESFETs

• Silicon carbide vertical MESFET devices are well suited for high speed and high power electronic devices. In this work we have optimized the geometry of vertical MESFETs for microwave applications, using iterative two-dimensional simulations. Relevant parasitics are included in the simulations to investigate the performance of realistic devices. The state of the art device has f(T)=7 GHz and we show that vertical MESFETs fabricated with traditional technology are totally limited by parasitics. Two different approaches to reduce the parasitics in the vertical MESFET are proposed where f(T) increases significantly.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

SiC

MESFET

Electrical engineering, electronics and photonics

Elektroteknik, elektronik och fotonik

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)