SiNx films and membranes for photonic and MEMS applications

Xiong, WenjuanChinese Academy of Sciences, Beijing, China; University of Chinese Academy of Sciences, Beijing, China (author)

This work presents a novel process to form SiN x films and process for membranes with excellent mechanical properties for micro-electro-mechanical systems application as well as integration as IR waveguide for photonic application. The SiN x films were fabricated in SiNgen apparatus which is a single wafer chamber equipment compared to conventional low pressure chemical vapor deposition furnace process. The films showed low stress, good mechanical properties, but the synthesis also eradicates the issues of particle contamination. Through optimizing of the growth parameters and post annealing profile, low stress (40 Mpa) SiN x film could be finally deposited when annealing temperature rose up to 1150 °C. The stress relaxation is a result of more Si nano-crystalline which was formed during annealing, according to the FTIR results. The mechanical properties, Young’s modulus and hardness, were 210 Gpa and 20 Gpa respectively. For the waveguide application, a stack of three layers, SiO 2 /SiN x /SiO 2 was formed where the optimized layer thicknesses were used for minimum optical loss according to simulation feedback. After deposition of the first two layers in the stack, the samples were annealed in range of 900–1150 °C in order to release the stress. Chemical mechanical polish technique was applied to planarize the nitride layer prior to the oxide cladding layer. Such wafers can be used to bond to Si or Ge to manufacture advanced substrates.

Jiang, HaojieChinese Academy of Sciences, Beijing, China (author)
Li, TingtingChinese Academy of Sciences, Beijing, China (author)
Zhang, PengChinese Academy of Sciences, Beijing, China (author)
Xu, QingChinese Academy of Sciences, Beijing, China; University of Science and Technology of China, Hefei, People’s Republic of China (author)
Zhao, XueweiChinese Academy of Sciences, Beijing, China; University of Science and Technology of China, Hefei, People’s Republic of China (author)
Wang, GuileiChinese Academy of Sciences, Beijing, China (author)
Liu, YaodongChinese Academy of Sciences, Beijing, China (author)
Luo, YingChinese Academy of Sciences, Beijing, China (author)
Li, ZhihuaChinese Academy of Sciences, Beijing, China (author)
Li, JunfengChinese Academy of Sciences, Beijing, China (author)
Yu, JinzhongChinese Academy of Sciences, Beijing, China (author)
Chao, ZhaoChinese Academy of Sciences, Beijing, China (author)
Wang, WenwuChinese Academy of Sciences, Beijing, China (author)
Radamson, Henry H.Mittuniversitetet,Institutionen för elektronikkonstruktion,Chinese Academy of Sciences, Beijing, China; University of Chinese Academy of Sciences, Beijing, People’s Republic of China(Swepub:miun)henrad (author)
Chinese Academy of Sciences, Beijing, China; University of Chinese Academy of Sciences, Beijing, ChinaChinese Academy of Sciences, Beijing, China (creator_code:org_t)

In:Journal of materials science. Materials in electronics: Springer Science and Business Media LLC31, s. 90-970957-45221573-482X

By the author/editor: Xiong, Wenjuan; Jiang, Haojie; Li, Tingting; Zhang, Peng; Xu, Qing; Zhao, Xuewei; show more...; Wang, Guilei; Liu, Yaodong; Luo, Ying; Li, Zhihua; Li, Junfeng; Yu, Jinzhong; Chao, Zhao; Wang, Wenwu; Radamson, Henry ...; show less...

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ENGINEERING AND TECHNOLOGY: ENGINEERING AND ...; and Materials Engine ...; and Other Materials ...

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