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State of the Art an...
State of the Art and Future Perspectives in Advanced CMOS Technology
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- Radamson, Henry H. (author)
- Mittuniversitetet,Institutionen för elektronikkonstruktion,Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Guangdong Greater Bay Area Inst Integrated Circui, Res & Dev Ctr Optoelect Hybrid IC, Guangzhou 510535, Peoples R China.;Univ Chinese Acad Sci, Inst Microelect, Beijing 100049, Peoples R China.
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- Zhu, Huilong (author)
- Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.
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- Wu, Zhenhua (author)
- Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.
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- He, Xiaobin (author)
- Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.
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- Lin, Hongxiao (author)
- Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Guangdong Greater Bay Area Inst Integrated Circui, Res & Dev Ctr Optoelect Hybrid IC, Guangzhou 510535, Peoples R China.
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- Liu, Jinbiao (author)
- Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.
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- Xiang, Jinjuan (author)
- Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.
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- Kong, Zhenzhen (author)
- Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.
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- Xiong, Wenjuan (author)
- Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Univ Chinese Acad Sci, Inst Microelect, Beijing 100049, Peoples R China.
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- Li, Junjie (author)
- Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Univ Chinese Acad Sci, Inst Microelect, Beijing 100049, Peoples R China.
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- Cui, Hushan (author)
- Jiangsu Leuven Instruments, Xuzhou 221300, Jiangsu, Peoples R China.
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- Gao, Jianfeng (author)
- Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.
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- Yang, Hong (author)
- Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.
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- Du, Yong (author)
- Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Univ Chinese Acad Sci, Inst Microelect, Beijing 100049, Peoples R China.
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- Xu, Buqing (author)
- Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Univ Chinese Acad Sci, Inst Microelect, Beijing 100049, Peoples R China.
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- Li, Ben (author)
- Guangdong Greater Bay Area Inst Integrated Circui, Res & Dev Ctr Optoelect Hybrid IC, Guangzhou 510535, Peoples R China.
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- Zhao, Xuewei (author)
- Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Univ Sci & Technol China, Sch Cybersci, Hefei 230026, Peoples R China.
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- Yu, Jiahan (author)
- Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.
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- Dong, Yan (author)
- Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.
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- Wang, Guilei (author)
- Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.;Guangdong Greater Bay Area Inst Integrated Circui, Res & Dev Ctr Optoelect Hybrid IC, Guangzhou 510535, Peoples R China.;Univ Chinese Acad Sci, Inst Microelect, Beijing 100049, Peoples R China.
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(creator_code:org_t)
- 2020-08-07
- 2020
- English.
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In: Nanomaterials. - : MDPI AG. - 2079-4991. ; 10:8
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https://doi.org/10.3...
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https://miun.diva-po... (primary) (Raw object)
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Abstract
Subject headings
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- The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today's transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore's law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- CMOS
- process integration
- nano-scale transistors
- epitaxy
Publication and Content Type
- ref (subject category)
- for (subject category)
Find in a library
To the university's database
- By the author/editor
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Radamson, Henry ...
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Zhu, Huilong
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Wu, Zhenhua
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He, Xiaobin
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Lin, Hongxiao
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Liu, Jinbiao
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Xiang, Jinjuan
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Kong, Zhenzhen
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Xiong, Wenjuan
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Li, Junjie
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Cui, Hushan
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Gao, Jianfeng
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Yang, Hong
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Du, Yong
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Xu, Buqing
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Li, Ben
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Zhao, Xuewei
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Yu, Jiahan
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Dong, Yan
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Wang, Guilei
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- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Electrical Engin ...
- Articles in the publication
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Nanomaterials
- By the university
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Mid Sweden University