Vertical Sandwich Gate-All-Around Field-Effect Transistors with Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation

A new type of vertical nanowire (NW)/nanosheet (NS) field-effect transistors (FETs), termed vertical sandwich gate-all-around (GAA) FETs (VSAFETs), is presented in this work. Moreover, an integration flow that is compatible with processes used in the mainstream industry is proposed for the VSAFETs. Si/SiGe epitaxy, isotropic quasi-atomic-layer etching (qALE), and gate replacement were used to fabricate pVSAFETs for the first time. Vertical GAA FETs with self-aligned high-k metal gates and a small effective-gate-length variation were obtained. Isotropic qALE, including Si-selective etching of SiGe, was developed to control the diameter/thickness of the NW/NS channels. NWs with a diameter of 10 nm and NSs with a thickness of 20 nm were successfully fabricated, and good device characteristics were obtained. Finally, the device performance was investigated and is discussed in this work. © 2019 IEEE.

Ingår i:IEEE Electron Device Letters: Institute of Electrical and Electronics Engineers Inc.41:1, s. 8-110741-31061558-0563

Av författaren/redakt...: Yin, X.; Yang, H.; Xie, L.; Ai, X. Z.; Zhang, Y. B.; Jia, K. P.; visa fler...; Wu, Z. H.; Ma, X. L.; Zhang, Q. Z.; Mao, S. J.; Xiang, J. J.; Zhang, Y.; Gao, J. F.; He, X. B.; Bai, G. B.; Lu, Y. H.; Zhou, N.; Kong, Z. Z.; Zhao, J.; Ma, S. S.; Xuan, Z. H.; Zhu, H.; Li, Y. Y.; Li, L.; Zhang, Q. H.; Han, J. H.; Chen, R. L.; Qu, Y.; Yang, T.; Luo, J.; Li, J. F.; Yin, H. X.; Wang, G. L.; Radamson, Henry ...; Zhao, C.; Wang, W. W.; Ye, T. C.; Li, J. J.; Du, A. Y.; Li, C.; Zhao, L. H.; Huang, W. X.; visa färre...

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