GaAs Medipix2 hybrid pixel detector

9th International Workshop on Radiation Imaging Detectors, JUL 22-26, 2007, Nuremberg, GERMANY
A GaAs Medipix2 hybrid pixel detector based on high purity epitaxial GaAs material was successfully fabricated. The mesa type GaAs sensor with 256×256 pixels and total area of 1.4×1.4 cm2 was made of a 140-μm-thick epitaxial p–i–n structure utilizing reactive ion etching. A final thickness of approximately 110 μm for the all-epitaxial sensor element is achieved by back-thinning procedure. The sensor element is bump bonded to a Medipix2 read-out ASIC. The detector is capable of room temperature spectroscopic operation and it demonstrates the potential of GaAs for high resolution X-ray imaging systems operating at room temperature. This work describes the manufacturing process and electrical properties of the GaAs Medipix2 hybrid detector.

Nenonen, SeppoOxford Instruments Analythical Oy (author)
Vähänen, SamiVTT (author)
Tlustos, LukasCERN (author)
Fröjdh, ChristerMittuniversitetet,Institutionen för informationsteknologi och medier (-2013),STC(Swepub:miun)chrfro (author)
Campbell, MichaelCERN (author)
Zhilyaev, YuriYoffe Institute (author)
Lipsanen, HarriHelsinki University of Technology (author)
Helsinki University of TechnologyOxford Instruments Analythical Oy (creator_code:org_t)

In:Nuclear Instruments and Methods in Physics Research Section A: Elsevier591:1, s. 174-1770168-90021872-9576

By the author/editor: Kostamo, Pasi; Nenonen, Seppo; Vähänen, Sami; Tlustos, Lukas; Fröjdh, Christer; Campbell, Michae ...; show more...; Zhilyaev, Yuri; Lipsanen, Harri; show less...

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