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  • Edwards, MichaelUniversity of Bath (author)

Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments

  • Article/chapterEnglish2010

Publisher, publication year, extent ...

  • 2010
  • printrdacarrier

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  • LIBRIS-ID:oai:DiVA.org:ri-13432
  • https://urn.kb.se/resolve?urn=urn:nbn:se:ri:diva-13432URI
  • https://doi.org/10.1109/ASDAM.2010.5666320DOI

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  • Language:English
  • Summary in:English

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  • Subject category:ref swepub-contenttype
  • Subject category:kon swepub-publicationtype

Notes

  • GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN / AlGaN / sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a 'drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10 - 50 bar (5 MPa) and above 300°C. ©2010 IEEE.

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Added entries (persons, corporate bodies, meetings, titles ...)

  • Vittoz, S.CNRS (author)
  • Amen, RafaelRISE,IVF (author)
  • Rufer, L.CNRS (author)
  • Johander, PerRISE,IVF (author)
  • Bowen, C.R.University of Bath (author)
  • University of BathCNRS (creator_code:org_t)

Related titles

  • In:Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, s. 127-1309781424485758

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Edwards, Michael
Vittoz, S.
Amen, Rafael
Rufer, L.
Johander, Per
Bowen, C.R.
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