Planarization of epitaxial SiC trench structures by plasma ion etching

• In this work, we present a planarization concept for epitaxial SiC trench structures involving reactive ion etching (RIE) and inductive coupled plasma (ICP) dry etching. The general idea is to transfer the flat surface from spun-on BCB/photo-resist layers to deposited silicon dioxide and finally to bulk SiC by applying process conditions with the same etch rate for the different materials. In this way several microns of unwanted material can be removed and planar SiC surfaces are obtained. With this method trench structures filled by epitaxial re-growth can be planarized with smooth surfaces and good homogeneity over the wafer. Cost-efficient device manufacturing can be achieved by using standard semiconductor process equipment. This technology makes it possible to manufacture advanced epitaxial SiC material structures for devices such as trench JBS diodes and double-gate trench JFETs.

Nyckelord

Buried grid

Dry etching

ICP

JBS

Planarization

Re-growth

RIE

Trench

Manufacture

Silicon carbide

Silicon wafers

Trenching

Reactive ion etching

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)