Drain-current deep level transient spectroscopy investigation on epitaxial graphene/6H-SiC field effect transistors

• The electrically active deep levels in a graphene/silicon carbide field effect transistor (FET) were investigated by drain-current deep level transient spectroscopy (ID-DLTS). An evaluation procedure for ID-DLTS is developed in order to obtain the activation energy, the capture cross section and the trap concentration. We observed three defect centers corresponding to the intrinsic defects E1/E2, Ei and Z1/Z2 in n-type 6H-SiC. The determined parameters have been verified by conventional capacitance DLTS.

Nyckelord

Activation energy

Deep level transient spectroscopy

Defects

Silicon carbide

Capture cross sections

Deep-levels

Defect centers

Electrically actives

Epitaxial graphene

Intrinsic defects

Trap concentration

Field effect transistors

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