Stable and Tunable Charge Carrier Control of Graphene for Quantum Resistance Metrology

• Here we demonstrate a stable and tunable method to alter the carrier concentration of epitaxial graphene grown on silicon carbide. This technique relies on chemical doping by an acceptor molecule. Through careful tuning one can produce chemically doped graphene quantum resistance devices which show long-term stability in ambient conditions and have performance comparable to that of GaAs quantum resistance standards. This development paves the way for controlled device fabrication of graphene quantum hall resistance standards, which can be reliably tailored to operate below 5 T and above 4 K out-of-the-box, without further adjustments from the end-user.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Medicinteknik -- Medicinsk apparatteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Medical Engineering -- Medical Equipment Engineering (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

chemical doping

graphene

measurement standards

quantum hall effect

Carrier concentration

Gallium arsenide

Graphene devices

III-V semiconductors

Silicon carbide

Acceptor molecules

Ambient conditions

Device fabrications

Long term stability

Quantum Hall resistance

Quantum resistance

Publikations- och innehållstyp

ref (ämneskategori)

kon (ämneskategori)