Alternative method of interface traps passivation by introducing of thin silicon nitride layer at 4H-SiC/SiO2 interface

• An alternative approach for reduction of interface traps density at 4H-SiC/SiO2 interface is proposed. Silicon nitride / silicon oxide stack was deposited on p-type 4H-SiC (0001) epilayers and subsequently over-oxidized. The electrical characterization of the interface was done by employing metal-oxide semiconductor (MOS) devices, inversion-channel MOS devices and lateral MOS field effect transistors (MOSFETs).

Nyckelord

devices

electrical properties

semiconducting

Electric field effects

Electric properties

Field effect semiconductor devices

Field effect transistors

Nitrides

Semiconductor devices

Silicon carbide

Silicon nitride

Silicon oxides

Electrical characterization

Interface traps

Inversion channels

Metal oxide semiconductor

P-type 4H-SiC

SiC/siO2-interfaces

MOS devices

Publikations- och innehållstyp

ref (ämneskategori)

kon (ämneskategori)