Temperature-dependent spin injection dynamics in InGaAs/GaAs quantum well-dot tunnel-coupled nanostructures

Chen, Shula,1986-Graduate School of Information Science and Technology, Hokkaido University, Kita-ku, Sapporo, Japan (författare)

Time-resolved optical spin orientation spectroscopy was employed to investigate the temperature-dependent electron spin injection in In0.1Ga0.9As quantum well (QW) and In0.5Ga0.5As quantum dots (QDs) tunnel-coupled nanostructures with 4, 6, and 8 nm-thick GaAs barriers. The fast picosecond-ranged spin injection from QW to QDexcited states (ES) was observed to speed up with temperature, as induced by pronounced longitudinal-optical (LO)-phonon-involved multiple scattering process, which contributes to a thermally stable and almost fully spin-conserving injection within 5–180 K. The LO-phonon coupling was also found to cause accelerated electron spin relaxation of QD ES at elevated temperature, mainly via hyperfine interaction with random nuclear field.

Kiba, T.Kitami Institute of Technology, Kitami, Hokkaido, Japan (författare)
Yang, XiaojieSuzhou QiangMing Optoelectronics Co. Ltd., Suzhou, China (författare)
Takayama, J.Graduate School of Information Science and Technology, Hokkaido University, Kita-ku, Sapporo, Japan (författare)
Murayama, A.Graduate School of Information Science and Technology, Hokkaido University, Kita-ku, Sapporo, Japan (författare)
Graduate School of Information Science and Technology, Hokkaido University, Kita-ku, Sapporo, JapanKitami Institute of Technology, Kitami, Hokkaido, Japan (creator_code:org_t)

Ingår i:Applied Physics LettersMelville, NY, United States : A I P Publishing LLC1190003-69511077-3118
Ingår i:Journal of Applied PhysicsMelville, NY, United States : A I P Publishing LLC1190021-89791089-7550

Av författaren/redakt...: Chen, Shula, 198 ...; Kiba, T.; Yang, Xiaojie; Takayama, J.; Murayama, A.

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