Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters : An Overview

• With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/ overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technologies for the overcurrent performance of SiC power modules in power electronics converters. It presents the limitations produced at the power module level by packaging materials, which include semiconductor chips, substrates, metallization, bonding techniques, die attach, and encapsulation materials. Specifically, technologies for overcurrent related temperatures in excess of 200°C are discussed. This article also discusses potential technologies, which have been proven or may be potential candidates for improving the safe operating area. The discussed technologies are use of phase-change materials below the semiconductor chip, Peltier elements, new layouts of the power modules, control and modulation techniques for converters. Special attention has been given to an overview of various potential phase-change materials, which can be considered for high-temperature operations. 

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Bonding techniques

high temperature

new layouts

overcurrent (OC)

packaging

parasites

phase-change materials (PCMs)

power modules

wide band gap semiconductors

Chip scale packages

Energy gap

High temperature applications

High temperature operations

Microprocessor chips

Power converters

Power MOSFET

Schottky barrier diodes

Substrates

Heating system

Highest temperature

Insulatedgate bipolar transistor (IGBTs)

MOS-FET

MOSFETs

Multi chip modules

New layout

Overcurrents

Parasite-

Power module

Schottky diodes

Wide-band-gap semiconductor

Silicon carbide

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)