Ambipolar charge transport in quasi-free-standing monolayer graphene on SiC obtained by gold intercalation

• We present a study of quasi-free-standing monolayer graphene obtained by intercalation of Au atoms at the interface between the carbon buffer layer (Bu-L) and the silicon-terminated face (0001) of 4H-silicon carbide. Au intercalation is achieved by deposition of an atomically thin Au layer on the Bu-L followed by annealing at 850 °C in an argon atmosphere. We explore the intercalation of Au and decoupling of the Bu-L into quasi-free-standing monolayer graphene by surface science characterization and electron transport in top-gated electronic devices. By gate-dependent magnetotransport we find that the Au-intercalated buffer layer displays all properties of monolayer graphene, namely gate-tunable ambipolar transport across the Dirac point, but we find no observable enhancement of spin-orbit effects in the graphene layer, despite its proximity to the intercalated Au layer. 

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Buffer layers; Electron transport properties; Gold; Silicon carbide; Spin orbit coupling

4H silicon carbide; Ambipolar charge transports; Ambipolar transport; Argon atmospheres; Electron transport; Electronic device; Graphene layers; Spin-orbit effects

Graphene

Publication and Content Type

ref (subject category)

art (subject category)