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  • Luo, Zhong-Zhen (author)

PbGa2MSe6 (M = Si, Ge) : Two Exceptional Infrared Nonlinear Optical Crystals

  • Article/chapterEnglish2015

Publisher, publication year, extent ...

  • 2015-01-16
  • American Chemical Society (ACS),2015
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:su-115926
  • https://urn.kb.se/resolve?urn=urn:nbn:se:su:diva-115926URI
  • https://doi.org/10.1021/cm504195xDOI

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  • Language:English
  • Summary in:English

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  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • AuthorCount:8;
  • Two noncentrosymmetric (NCS) quaternary selenides, PbGa2SiSe6 (1) and PbGa2GeSe6 (2), with second-order nonlinear optical (NLO) responses, were synthesized by a conventional high-temperature solid-state reaction method. Compounds 1 and 2 are constructed by three NCS chromophores, [PbSe4], [GaSe4], and [Ga/SiSe4] or [Ga/GeSe4], with the covalent interactions between the X and Se atoms (X = Pb, Ga, Ga/Si, or Ga/Ge). They crystallize in the polar space groups Cc and Fdd2, respectively. Inspiringly, compound 2 is phase-matchable (PM) and shows high laser-induced damage threshold (LIDT) of 3.7 x AgGaS2 and wide transparent region (0.6325 mu m) in the mid-infrared (MIR) region. Most importantly, it presents extraordinary strong second harmonic generation (SHG) at 2.05 mu m radiation of about 12 x AgGaS2 at the particle size of 2545 mu m, which represents the strongest SHG among PM chalcogenides to date. The calculated major SHG tensor elements of compounds 1 and 2 are d31 = 224.7 and d12 = 222.1 pm/V, respectively, while the calculated d36 of AgGaS2 is only 21.2 pm/V.

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  • Lin, Chen-Sheng (author)
  • Cui, Hong-Hua (author)
  • Zhang, Wei-Long (author)
  • Zhang, Hao (author)
  • Chen, HongStockholms universitet,Institutionen för material- och miljökemi (MMK)(Swepub:su)hoche (author)
  • He, Zhang-Zhen (author)
  • Cheng, Wen-Dan (author)
  • Stockholms universitetInstitutionen för material- och miljökemi (MMK) (creator_code:org_t)

Related titles

  • In:Chemistry of Materials: American Chemical Society (ACS)27:3, s. 914-9220897-47561520-5002

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